Datasheet > HGT1S7N60B3S9A

HGT1S7N60B3S9A

更新时间： 2024-02-12 16:22:18

品牌	Logo	应用领域
其他 - ETC		晶体晶体管电动机控制瞄准线双极性晶体管栅
页数	文件大小	规格书
7页	137K
描述
TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 7A I(C) \| TO-263AB

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中文翻译

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技术参数
数据手册

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HGT1S7N60B3S9A 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	unknown	风险等级：	5.58
其他特性：	LOW CONDUCTION LOSS, ULTRA FAST SWITCHING	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	14 A	集电极-发射极最大电压：	600 V
配置：	SINGLE	JEDEC-95代码：	TO-263AB
JESD-30 代码：	R-PSSO-G2	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	SINGLE	晶体管应用：	MOTOR CONTROL
晶体管元件材料：	SILICON	标称断开时间 (toff)：	230 ns
标称接通时间 (ton)：	24 ns	Base Number Matches：	1

HGT1S7N60B3S9A 数据手册

HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3

Data Sheet

January 2002

14A, 600V, UFS Series N-Channel IGBTs

Features

The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3

are MOS gated high voltage switching devices combining the

best features of MOSFETs and bipolar transistors. These

devices have the high input impedance of a MOSFET and the

low on-state conduction loss of a bipolar transistor. The much

lower on-state voltage drop varies only moderately between

• 14A, 600V, T = 25 C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 120ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

25 C and 150 C.

The IGBT is ideal for many high voltage switching applications

operating at moderate frequencies where low conduction

losses are essential, such as: AC and DC motor controls,

power supplies and drivers for solenoids, relays and contactors.

Packaging

JEDEC TO-220AB

COLLECTOR

(FLANGE)

Formerly Developmental Type TA49190.

Ordering Information

PART NUMBER

HGTD7N60B3S

HGT1S7N60B3S

HGTP7N60B3

PACKAGE

BRAND

G7N60B

TO-252AA

JEDEC TO-263AB

COLLECTOR

TO-263AB

TO-220AB

G7N60B3

NOTE: When ordering, use the entire part number. Add the suffix 9A

to obtain the TO-252AA and TO-263AB variant in tape and reel, e.g.,

HGTD7N60B3S9A.

(FLANGE)

Symbol

JEDEC TO-252AA

COLLECTOR

(FLANGE)

Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Rev. B

12 3 4 5 6 7

中文翻译

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与HGT1S7N60B3S9A相关器件

型号	品牌	获取价格	描述	数据表
HGT1S7N60C3D	FAIRCHILD	获取价格	14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGT1S7N60C3DR	RENESAS	获取价格	14A, 600V, N-CHANNEL IGBT, TO-262AA, PLASTIC PACKAGE-3
HGT1S7N60C3DS	FAIRCHILD	获取价格	14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGT1S7N60C3DS	INTERSIL	获取价格	14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGT1S7N60C3DS9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 14A I(C) \| TO-263AB
HGT1Y27N120BND	RENESAS	获取价格	27A, 1200V, N-CHANNEL IGBT, TO-264, TO-264, 3 PIN
HGT1Y30N120CND	RENESAS	获取价格	30A, 1200V, N-CHANNEL IGBT, TO-264, TO-264, 3 PIN
HGT1Y40N60A4D	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3
HGT1Y40N60B3D	FAIRCHILD	获取价格	70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGT1Y40N60C3D	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 40A I(C) \| TO-264

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