Datasheet > 晶体管 > IGBT> HGT1S7N60A4S9A

HGT1S7N60A4S9A

更新时间： 2024-02-04 18:33:13

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体开关晶体管功率控制瞄准线双极性晶体管栅
页数	文件大小	规格书
8页	199K
描述
600V, SMPS Series N-Channel IGBT

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中文翻译

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技术参数
数据手册

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HGT1S7N60A4S9A 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	unknown	风险等级：	5.02
Is Samacsys：	N	其他特性：	LOW CONDUCTION LOSS
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	34 A
集电极-发射极最大电压：	600 V	配置：	SINGLE
JEDEC-95代码：	TO-263AB	JESD-30 代码：	R-PSSO-G2
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	SINGLE
晶体管应用：	MOTOR CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	205 ns	标称接通时间 (ton)：	17 ns
Base Number Matches：	1

HGT1S7N60A4S9A 数据手册

HGT1S7N60A4S9A, HGTG7N60A4

HGTP7N60A4

Data Sheet

August 2003

600V, SMPS Series N-Channel IGBT

Features

The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4

are MOS gated high voltage switching devices combining

the best features of MOSFETs and bipolar transistors. These

devices have the high input impedance of a MOSFET and

the low on-state conduction loss of a bipolar transistor. The

much lower on-state voltage drop varies only moderately

• >100kHz Operation at 390V, 7A

• 200kHz Operation at 390V, 5A

• 600V Switching SOA Capability

• Typical Fall Time . . . . . . . . . . . . . . . . . . . 75ns at T = 125 C

• Low Conduction Loss

between 25 C and 150 C.

This IGBT is ideal for many high voltage switching

applications operating at high frequencies where low

conduction losses are essential. This device has been

optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49331.

Ordering Information

Symbol

PART NUMBER

HGT1S7N60A4S9A

HGTG7N60A4

PACKAGE

BRAND

7N60A4

TO-263AB

TO-247

7N60A4

HGTP7N60A4

TO-220AB

NOTE: When ordering, use the entire part number.

Packaging

JEDEC STYLE TO-247

JEDEC TO-220AB

COLLECTOR

(FLANGE)

COLLECTOR

(BOTTOM SIDE METAL)

JEDEC TO-263AB

COLLECTOR

(FLANGE)

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B1

12 3 4 5 6 7 8

中文翻译

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与HGT1S7N60A4S9A相关器件

型号	品牌	获取价格	描述	数据表
HGT1S7N60A4S9A_04	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT
HGT1S7N60B3	ROCHESTER	获取价格	14A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-3
HGT1S7N60B3D	ROCHESTER	获取价格	14A, 600V, N-CHANNEL IGBT, TO-262AA, PLASTIC PACKAGE-3
HGT1S7N60B3DS	FAIRCHILD	获取价格	14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGT1S7N60B3DS	INTERSIL	获取价格	14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGT1S7N60B3DS	ROCHESTER	获取价格	14A, 600V, N-CHANNEL IGBT, TO-263AB, PLASTIC PACKAGE-4
HGT1S7N60B3DS9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 7A I(C) \| TO-263AB
HGT1S7N60B3S	INTERSIL	获取价格	14A, 600V, UFS Series N-Channel IGBTs
HGT1S7N60B3S9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 7A I(C) \| TO-263AB
HGT1S7N60C3D	FAIRCHILD	获取价格	14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

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