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HGT1S7N60B3DS PDF预览

HGT1S7N60B3DS

更新时间: 2024-09-27 19:57:59
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER 超快速恢复二极管电动机控制瞄准线双极性晶体管
页数 文件大小 规格书
11页 963K
描述
14A, 600V, N-CHANNEL IGBT, TO-263AB, PLASTIC PACKAGE-4

HGT1S7N60B3DS 技术参数

生命周期:Active零件包装代码:D2PAK
包装说明:PLASTIC PACKAGE-4针数:3
Reach Compliance Code:unknown风险等级:5.58
其他特性:LOW CONDUCTION LOSS, HYPER FAST RECOVERY外壳连接:COLLECTOR
最大集电极电流 (IC):14 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODEJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:COMMERCIAL
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):230 ns
标称接通时间 (ton):24 nsBase Number Matches:1

HGT1S7N60B3DS 数据手册

 浏览型号HGT1S7N60B3DS的Datasheet PDF文件第2页浏览型号HGT1S7N60B3DS的Datasheet PDF文件第3页浏览型号HGT1S7N60B3DS的Datasheet PDF文件第4页浏览型号HGT1S7N60B3DS的Datasheet PDF文件第5页浏览型号HGT1S7N60B3DS的Datasheet PDF文件第6页浏览型号HGT1S7N60B3DS的Datasheet PDF文件第7页 

与HGT1S7N60B3DS相关器件

型号 品牌 获取价格 描述 数据表
HGT1S7N60B3DS9A ETC

获取价格

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB
HGT1S7N60B3S INTERSIL

获取价格

14A, 600V, UFS Series N-Channel IGBTs
HGT1S7N60B3S9A ETC

获取价格

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB
HGT1S7N60C3D FAIRCHILD

获取价格

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGT1S7N60C3DR RENESAS

获取价格

14A, 600V, N-CHANNEL IGBT, TO-262AA, PLASTIC PACKAGE-3
HGT1S7N60C3DS FAIRCHILD

获取价格

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGT1S7N60C3DS INTERSIL

获取价格

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGT1S7N60C3DS9A ETC

获取价格

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB
HGT1Y27N120BND RENESAS

获取价格

27A, 1200V, N-CHANNEL IGBT, TO-264, TO-264, 3 PIN
HGT1Y30N120CND RENESAS

获取价格

30A, 1200V, N-CHANNEL IGBT, TO-264, TO-264, 3 PIN