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HGT1S5N120CNDS9A PDF预览

HGT1S5N120CNDS9A

更新时间： 2024-01-04 11:34:03
品牌 Logo 应用领域
其他 - ETC 晶体晶体管电动机控制瞄准线双极性晶体管栅
页数 文件大小 规格书
7页 116K
描述
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB

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HGT1S5N120CNDS9A 技术参数

是否Rohs认证： 不符合生命周期：Transferred
Reach Compliance Code：not_compliant风险等级：5.04
Is Samacsys：N其他特性：LOW CONDUCTION LOSS
外壳连接：COLLECTOR最大集电极电流 (IC)：25 A
集电极-发射极最大电压：1200 V配置：SINGLE WITH BUILT-IN DIODE
最大降落时间（tf）：400 ns门极-发射极最大电压：20 V
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e0元件数量：1
端子数量：2最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：167 W认证状态：Not Qualified
最大上升时间（tr）：16 ns子类别：Insulated Gate BIP Transistors
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：SINGLE
晶体管应用：MOTOR CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：575 ns标称接通时间 (ton)：32 ns
Base Number Matches：1

HGT1S5N120CNDS9A 数据手册

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HGTG5N120CND, HGTP5N120CND,  
HGT1S5N120CNDS  
Data Sheet  
January 2000  
File Number 4598.2  
25A, 1200V, NPT Series N-Channel IGBT  
with Anti-Parallel Hyperfast Diode  
Features  
o
• 25A, 1200V, T = 25 C  
C
The HGTG5N120CND, HGTP5N120CND and  
• 1200V Switching SOA Capability  
HGT1S5N120CNDS are Non-Punch Through (NPT) IGBT  
designs. They are new members of the MOS gated high  
voltage switching IGBT family. IGBTs combine the best  
features of MOSFETs and bipolar transistors. This device  
has the high input impedance of a MOSFET and the low  
on-state conduction loss of a bipolar transistor. The IGBT  
used is developmental type TA49309. The diode used in  
anti-parallel is developmental type TA49058.  
o
• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at T = 150 C  
J
• Short Circuit Rating  
• Low Conduction Loss  
• Temperature Compensating SABER™ Model  
Thermal Impedance SPICE Model  
www.intersil.com  
• Related Literature  
The IGBT is ideal for many high voltage switching  
applications operating at moderate frequencies where low  
conduction losses are essential, such as AC and DC motor  
controls, power supplies and drivers for solenoids, relays  
and contactors.  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Packaging  
JEDEC TO-220AB ALTERNATE VERSION  
Formerly Developmental Type TA49307.  
E
C
G
Ordering Information  
COLLECTOR  
(FLANGE)  
PART NUMBER  
HGTG5N120CND  
HGTP5N120CND  
HGT1S5N120CNDS  
PACKAGE  
BRAND  
5N120CND  
TO-247  
TO-220AB  
TO-263AB  
5N120CND  
5N120CND  
JEDEC TO-263AB  
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-263AB variant in Tape and Reel, i.e.,  
HGT1S5N120CNDS9A.  
COLLECTOR  
(FLANGE)  
G
E
Symbol  
C
JEDEC STYLE TO-247  
E
C
G
G
E
COLLECTOR  
(FLANGE)  
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000  
SABER™ is a trademark of Analogy, Inc.  
1
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