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HGT1S3N60C3DS9A PDF预览

HGT1S3N60C3DS9A

更新时间： 2024-02-27 22:55:24
品牌 Logo 应用领域
其他 - ETC 晶体晶体管电动机控制瞄准线双极性晶体管栅
页数 文件大小 规格书
8页 337K
描述
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3A I(C) | TO-263AB

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中文翻译

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HGT1S3N60C3DS9A 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：unknown风险等级：5.03
Is Samacsys：N其他特性：LOW CONDUCTION LOSS
外壳连接：COLLECTOR最大集电极电流 (IC)：6 A
集电极-发射极最大电压：600 V配置：SINGLE WITH BUILT-IN DIODE
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：SINGLE
晶体管应用：MOTOR CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：455 ns标称接通时间 (ton)：15 ns
Base Number Matches：1

HGT1S3N60C3DS9A 数据手册

 浏览型号HGT1S3N60C3DS9A的Datasheet PDF文件第2页浏览型号HGT1S3N60C3DS9A的Datasheet PDF文件第3页浏览型号HGT1S3N60C3DS9A的Datasheet PDF文件第4页浏览型号HGT1S3N60C3DS9A的Datasheet PDF文件第5页浏览型号HGT1S3N60C3DS9A的Datasheet PDF文件第6页浏览型号HGT1S3N60C3DS9A的Datasheet PDF文件第7页 
HGTP3N60C3D, HGT1S3N60C3DS  
Data Sheet  
December 2001  
6A, 600V, UFS Series N-Channel IGBT with  
Anti-Parallel Hyperfast Diodes  
Features  
o
• 6A, 600V at T = 25 C  
C
The HGTP3N60C3D, and HGT1S3N60C3DS are MOS  
gated high voltage switching devices combining the best  
features of MOSFETs and bipolar transistors. These devices  
have the high input impedance of a MOSFET and the low  
on-state conduction loss of a bipolar transistor. The much  
lower on-state voltage drop varies only moderately between  
25 C and 150 C. The IGBT used is the development type  
TA49113. The diode used in anti-parallel with the IGBT is the  
development type TA49055.  
• 600V Switching SOA Capability  
o
• Typical Fall Time. . . . . . . . . . . . . . . . 130ns at T = 150 C  
J
• Short Circuit Rating  
• Low Conduction Loss  
• Hyperfast Anti-Parallel Diode  
o
o
Packaging  
JEDEC TO-220AB  
The IGBT is ideal for many high voltage switching applications  
operating at moderate frequencies where low conduction losses  
are essential.  
EMITTER  
COLLECTOR  
GATE  
Formerly Developmental Type TA49119.  
COLLECTOR (FLANGE)  
Ordering Information  
PART NUMBER  
PACKAGE  
TO-220AB  
TO-263AB  
BRAND  
G3N60C3D  
G3N60C3D  
HGTP3N60C3D  
HGT1S3N60C3DS  
JEDEC TO-263AB  
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-263AB variant in tape and reel, i.e.,  
HGT1S3N60C3DS9A.  
COLLECTOR  
(FLANGE)  
GATE  
Symbol  
EMITTER  
C
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
©2001 Fairchild Semiconductor Corporation  
HGTP3N60C3D, HGT1S3N60C3DS Rev. B  
12345678

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