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HGT1S5N120BNDS PDF预览

HGT1S5N120BNDS

更新时间： 2024-09-27 20:24:43
品牌 Logo 应用领域
瑞萨 - RENESAS 超快速恢复二极管电动机控制瞄准线双极性晶体管
页数 文件大小 规格书
7页 88K
描述
21A, 1200V, N-CHANNEL IGBT, TO-263AB

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中文翻译

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HGT1S5N120BNDS 技术参数

是否Rohs认证： 不符合生命周期：Transferred
Reach Compliance Code：not_compliant风险等级：5.04
其他特性：LOW CONDUCTION LOSS外壳连接：COLLECTOR
最大集电极电流 (IC)：21 A集电极-发射极最大电压：1200 V
配置：SINGLE WITH BUILT-IN DIODE最大降落时间（tf）：160 ns
门极-发射极最大电压：20 VJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e0
元件数量：1端子数量：2
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：167 W
认证状态：Not Qualified最大上升时间（tr）：20 ns
子类别：Insulated Gate BIP Transistors表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：SINGLE晶体管应用：MOTOR CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：357 ns
标称接通时间 (ton)：35 nsBase Number Matches：1

HGT1S5N120BNDS 数据手册

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HGTG5N120BND, HGTP5N120BND,  
HGT1S5N120BNDS  
Data Sheet  
January 2000  
File Number 4597.2  
21A, 1200V, NPT Series N-Channel IGBTs  
with Anti-Parallel Hyperfast Diodes  
Features  
o
• 21A, 1200V, T = 25 C  
C
The HGTG5N120BN, HGTP5N120BND, and  
• 1200V Switching SOA Capability  
HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT  
designs. They are new members of the MOS gated high  
voltage switching IGBT family. IGBTs combine the best  
features of MOSFETs and bipolar transistors. This device  
has the high input impedance of a MOSFET and the low on-  
state conduction loss of a bipolar transistor. The IGBT used  
is the development type TA49308. The Diode used is the  
development type TA49058 (Part number RHRD6120).  
o
• Typical Fall Time. . . . . . . . . . . . . . . . 175ns at T = 150 C  
J
• Short Circuit Rating  
• Low Conduction Loss  
• Thermal Impedance SPICE Model  
Temperature Compensating SABER™ Model  
www.intersil.com  
• Related Literature  
The IGBT is ideal for many high voltage switching  
applications operating at moderate frequencies where low  
conduction losses are essential, such as: AC and DC motor  
controls, power supplies and drivers for solenoids, relays  
and contactors.  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Packaging  
JEDEC STYLE TO-247  
Formerly Developmental Type TA49306.  
E
C
Ordering Information  
COLLECTOR  
(FLANGE)  
G
PART NUMBER  
HGTG5N120BND  
HGTP5N120BND  
HGT1S5N120BNDS  
PACKAGE  
BRAND  
5N120BND  
TO-247  
TO-220AB  
TO-263AB  
5N120BND  
5N120BND  
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-263AB variant in Tape and Reel, i.e.,  
HGT1S5N120BNS9A.  
JEDEC TO-220AB (ALTERNATE VERSION)  
E
C
G
Symbol  
C
COLLECTOR  
(FLANGE)  
G
JEDEC TO-263AB  
E
COLLECTOR  
(FLANGE)  
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
SABER™ is a trademark of Analogy, Inc.  
1
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000  
1234567

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与HGT1S5N120BNDS相关器件

型号 品牌 获取价格 描述 数据表
HGT1S5N120BNDS9A ETC

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 		TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 10A I(C) | TO-263AB
HGT1S5N120BNS INTERSIL

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 		21A, 1200V, NPT Series N-Channel IGBTs
HGT1S5N120BNS9A ETC

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 		TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 10A I(C) | TO-263AB
HGT1S5N120CNDS INTERSIL

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 		25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S5N120CNDS9A ETC

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 		TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB
HGT1S5N120CNS INTERSIL

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 		25A, 1200V, NPT Series N-Channel IGBT
HGT1S5N120CNS9A ETC

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 		TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB
HGT1S7N60A4DS FAIRCHILD

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 		600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S7N60A4DS INTERSIL

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 		600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S7N60A4DS9A ROCHESTER

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 		34A, 600V, N-CHANNEL IGBT, TO-263AB, TO-263AB, 3 PIN

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