5秒后页面跳转
捷配首页

Datasheet > HGT1S3N60B3DS9A
HGT1S3N60B3DS9A PDF预览

HGT1S3N60B3DS9A

更新时间： 2024-02-10 09:57:19
品牌 Logo 应用领域
其他 - ETC 晶体晶体管电动机控制瞄准线双极性晶体管栅
页数 文件大小 规格书
8页 236K
描述
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB

阅读下载

中文翻译

获取价格

HGT1S3N60B3DS9A 技术参数

是否Rohs认证： 不符合生命周期：Transferred
Reach Compliance Code：not_compliant风险等级：5.11
Is Samacsys：N其他特性：LOW CONDUCTION LOSS
外壳连接：COLLECTOR最大集电极电流 (IC)：7 A
集电极-发射极最大电压：600 V配置：SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值：6 V门极-发射极最大电压：20 V
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e0元件数量：1
端子数量：2最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：33.3 W认证状态：Not Qualified
子类别：Insulated Gate BIP Transistors表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：SINGLE晶体管应用：MOTOR CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：335 ns
标称接通时间 (ton)：34 nsBase Number Matches：1

HGT1S3N60B3DS9A 数据手册

 浏览型号HGT1S3N60B3DS9A的Datasheet PDF文件第2页浏览型号HGT1S3N60B3DS9A的Datasheet PDF文件第3页浏览型号HGT1S3N60B3DS9A的Datasheet PDF文件第4页浏览型号HGT1S3N60B3DS9A的Datasheet PDF文件第5页浏览型号HGT1S3N60B3DS9A的Datasheet PDF文件第6页浏览型号HGT1S3N60B3DS9A的Datasheet PDF文件第7页 
HGTP3N60B3D, HGT1S3N60B3DS  
Data Sheet  
December 2001  
7A, 600V, UFS Series N-Channel IGBT with  
Anti-Parallel Hyperfast Diode  
Features  
o
• 7A, 600V T = 25 C  
C
The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated  
high voltage switching devices combining the best features  
of MOSFETs and bipolar transistors. These devices have the  
high input impedance of a MOSFET and the low on-state  
conduction loss of a bipolar transistor. The much lower on-  
• 600V Switching SOA Capability  
o
• Typical Fall Time. . . . . . . . . . . . . . . . 115ns at T = 125 C  
J
• Short Circuit Rating  
• Low Conduction Loss  
• Hyperfast Anti-Parallel Diode  
• Related Literature  
o
state voltage drop varies only moderately between 25 C and  
o
150 C. The diode used in anti-parallel with the IGBT is the  
RHRD460. The IGBT used is TA49192.  
The IGBT is ideal for many high voltage switching  
applications operating at moderate frequencies where low  
conduction losses are essential, such as: AC and DC motor  
controls, power supplies and drivers for solenoids, relays  
and contactors.  
• TB334 “Guidelines for Soldering Surface Mount  
- Components to PC Boards  
Packaging  
JEDEC TO-220AB  
Formerly Developmental Type TA49193.  
E
C
G
Ordering Information  
COLLECTOR  
(FLANGE)  
PART NUMBER  
PACKAGE  
TO-220AB  
TO-263AB  
BRAND  
G3N60B3D  
G3N60B3D  
HGTP3N60B3D  
HGT1S3N60B3DS  
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-263AB variant in tape and reel, i.e.,  
HGT1S3N60B3DS9A.  
Symbol  
TO-263, TO-263AB  
C
COLLECTOR  
G
G
(FLANGE)  
E
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
©2001 Fairchild Semiconductor Corporation  
HGTP3N60B3D, HGT1S3N60B3DS Rev. B  
12345678

中文翻译

下载PDF

与HGT1S3N60B3DS9A相关器件

型号 品牌 获取价格 描述 数据表
HGT1S3N60B3S INTERSIL

获取价格

 		7A, 600V, UFS Series N-Channel IGBTs
HGT1S3N60B3S ROCHESTER

获取价格

 		7A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-4
HGT1S3N60B3S9A ETC

获取价格

 		TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB
HGT1S3N60C3D HARRIS

获取价格

 		6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGT1S3N60C3DS HARRIS

获取价格

 		6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGT1S3N60C3DS INTERSIL

获取价格

 		6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGT1S3N60C3DS9A ETC

获取价格

 		TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3A I(C) | TO-263AB
HGT1S5N120BNDS INTERSIL

获取价格

 		21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGT1S5N120BNDS RENESAS

获取价格

 		21A, 1200V, N-CHANNEL IGBT, TO-263AB
HGT1S5N120BNDS9A ETC

获取价格

 		TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 10A I(C) | TO-263AB

与HGT1S3N60B3DS9A相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证