Datasheet > HGT1S3N60B3S

HGT1S3N60B3S

更新时间： 2024-09-26 22:14:31

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管电动机控制瞄准线双极性晶体管栅
页数	文件大小	规格书
7页	144K
描述
7A, 600V, UFS Series N-Channel IGBTs

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HGT1S3N60B3S 数据手册

HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3

Data Sheet

January 2000

File Number 4368.1

7A, 600V, UFS Series N-Channel IGBTs

Features

The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3

are MOS gated high voltage switching devices combining

the best features of MOSFETs and bipolar transistors.

These devices have the high input impedance of a MOSFET

and the low on-state conduction loss of a bipolar transistor.

The much lower on-state voltage drop varies only

• 7A, 600V, T = 25 C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 115ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

moderately between 25 C and 150 C.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Packaging

JEDEC TO-220AB

COLLECTOR

(FLANGE)

Formerly Developmental Type TA49192.

Ordering Information

PART NUMBER

HGTD3N60B3S

HGT1S3N60B3S

HGTP3N60B3

PACKAGE

BRAND

G3N60B

TO-252AA

JEDEC TO-263AB

COLLECTOR

TO-263AB

TO-220AB

G3N60B3

(FLANGE)

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-252AA and TO-263AB variant in tape and reel, e.g.

HGTD3N60B3S9A.

Symbol

JEDEC TO-252AA

COLLECTOR

(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

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与HGT1S3N60B3S相关器件

型号	品牌	获取价格	描述	数据表
HGT1S3N60B3S9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 3.5A I(C) \| TO-263AB
HGT1S3N60C3D	HARRIS	获取价格	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGT1S3N60C3DS	HARRIS	获取价格	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGT1S3N60C3DS	INTERSIL	获取价格	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGT1S3N60C3DS9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 3A I(C) \| TO-263AB
HGT1S5N120BNDS	INTERSIL	获取价格	21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGT1S5N120BNDS	RENESAS	获取价格	21A, 1200V, N-CHANNEL IGBT, TO-263AB
HGT1S5N120BNDS9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| 10A I(C) \| TO-263AB
HGT1S5N120BNS	INTERSIL	获取价格	21A, 1200V, NPT Series N-Channel IGBTs
HGT1S5N120BNS9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| 10A I(C) \| TO-263AB

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