5秒后页面跳转
捷配首页

Datasheet > HGT1S3N60C3DS
HGT1S3N60C3DS PDF预览

HGT1S3N60C3DS

更新时间： 2024-01-01 00:10:21
品牌 Logo 应用领域
哈里斯 - HARRIS 晶体二极管晶体管电动机控制瞄准线双极性晶体管栅
页数 文件大小 规格书
7页 331K
描述
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

阅读下载

中文翻译

获取价格

HGT1S3N60C3DS 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：D2PAK
包装说明：TO-263AB, 3 PIN针数：4
Reach Compliance Code：unknown风险等级：5.65
Is Samacsys：N其他特性：LOW CONDUCTION LOSS
外壳连接：COLLECTOR最大集电极电流 (IC)：6 A
集电极-发射极最大电压：600 V配置：SINGLE WITH BUILT-IN DIODE
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e0湿度敏感等级：NOT SPECIFIED
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL认证状态：COMMERCIAL
表面贴装：YES端子面层：TIN LEAD
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：MOTOR CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：455 ns
标称接通时间 (ton)：15 nsBase Number Matches：1

HGT1S3N60C3DS 数据手册

 浏览型号HGT1S3N60C3DS的Datasheet PDF文件第2页浏览型号HGT1S3N60C3DS的Datasheet PDF文件第3页浏览型号HGT1S3N60C3DS的Datasheet PDF文件第4页浏览型号HGT1S3N60C3DS的Datasheet PDF文件第5页浏览型号HGT1S3N60C3DS的Datasheet PDF文件第6页浏览型号HGT1S3N60C3DS的Datasheet PDF文件第7页 
HGTP3N60C3D, HGT1S3N60C3D,  
HGT1S3N60C3DS  
S E M I C O N D U C T O R  
6A, 600V, UFS Series N-Channel IGBT  
with Anti-Parallel Hyperfast Diodes  
January 1997  
Features  
Packaging  
JEDEC TO-220AB  
o
• 6A, 600V at T = 25 C  
C
EMITTER  
COLLECTOR  
• 600V Switching SOA Capability  
GATE  
o
• Typical Fall Time . . . . . . . . . . . . . . 130ns at T = 150 C  
J
COLLECTOR (FLANGE)  
• Short Circuit Rating  
• Low Conduction Loss  
• Hyperfast Anti-Parallel Diode  
Description  
JEDEC TO-262AA  
EMITTER  
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS  
are MOS gated high voltage switching devices combining the  
best features of MOSFETs and bipolar transistors. These  
devices have the high input impedance of a MOSFET and the  
low on-state conduction loss of a bipolar transistor. The much  
lower on-state voltage drop varies only moderately between  
25 C and 150 C. The IGBT used is the development type  
TA49113. The diode used in anti-parallel with the IGBT is the  
development type TA49055.  
COLLECTOR  
GATE  
COLLECTOR  
(FLANGE)  
o
o
JEDEC TO-263AB  
M
A
The IGBT is ideal for many high voltage switching applications  
operating at moderate frequencies where low conduction losses  
are essential.  
COLLECTOR  
(FLANGE)  
GATE  
EMITTER  
PACKAGING AVAILABILITY  
PART NUMBER  
HGTP3N60C3D  
HGT1S3N60C3D  
HGT1S3N60C3DS  
PACKAGE  
TO-220AB  
BRAND  
G3N60C3D  
G3N60C3D  
G3N60C3D  
Terminal Diagram  
N-CHANNEL ENHANCEMENT MODE  
C
TO-262AA  
TO-263AB  
NOTE: When ordering, use the entire part number. Add the suffix 9A to  
obtain the TO-263AB variant in tape and reel, i.e. HGT1S3N60C3DS9A.  
G
Formerly Developmental Type TA49119.  
E
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified  
C
HGTP3N60C3D, HGT1S3N60C3D  
HGT1S3N60C3DS  
UNITS  
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV  
600  
V
CES  
Collector Current Continuous  
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
6
3
24  
±20  
±30  
A
A
A
V
V
C
C25  
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
Collector Current Pulsed (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V  
Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
Switching Safe Operating Area at T = 150 C, Fig. 14. . . . . . . . . . . . . . . . . . . . . . SSOA  
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
Power Dissipation Derating T > 25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . T , T  
C
C110  
CM  
GES  
GEM  
o
18A at 480V  
33  
0.27  
-40 to 150  
260  
J
o
W
C
D
o
o
W/ C  
C
o
C
J
STG  
o
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
C
L
Short Circuit Withstand Time (Note 2) at V  
NOTES:  
= 10V, Fig 6 . . . . . . . . . . . . . . . . . . . . .t  
8
µs  
GE  
SC  
1. Repetitive Rating: Pulse width limited by maximum junction temperature.  
o
2. V  
= 360V, T = 125 C, R = 82Ω.  
CE(PK)  
J
GE  
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.  
File Number 4140.1  
Copyright © Harris Corporation 1997  
3-9  
1234567

中文翻译

下载PDF

与HGT1S3N60C3DS相关器件

型号 品牌 获取价格 描述 数据表
HGT1S3N60C3DS9A ETC

获取价格

 		TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3A I(C) | TO-263AB
HGT1S5N120BNDS INTERSIL

获取价格

 		21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGT1S5N120BNDS RENESAS

获取价格

 		21A, 1200V, N-CHANNEL IGBT, TO-263AB
HGT1S5N120BNDS9A ETC

获取价格

 		TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 10A I(C) | TO-263AB
HGT1S5N120BNS INTERSIL

获取价格

 		21A, 1200V, NPT Series N-Channel IGBTs
HGT1S5N120BNS9A ETC

获取价格

 		TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 10A I(C) | TO-263AB
HGT1S5N120CNDS INTERSIL

获取价格

 		25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S5N120CNDS9A ETC

获取价格

 		TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB
HGT1S5N120CNS INTERSIL

获取价格

 		25A, 1200V, NPT Series N-Channel IGBT
HGT1S5N120CNS9A ETC

获取价格

 		TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB

与HGT1S3N60C3DS相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证