是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | unknown |
风险等级: | 5.09 | Is Samacsys: | N |
其他特性: | LOW CONDUCTION LOSS, AVALANCHE RATED | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 17 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | 最大降落时间(tf): | 100 ns |
门极发射器阈值电压最大值: | 7 V | 门极-发射极最大电压: | 20 V |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 70 W |
认证状态: | Not Qualified | 最大上升时间(tr): | 15 ns |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 180 ns | 标称接通时间 (ton): | 17.5 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HGT1S3N60A4S9A | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB | |
HGT1S3N60B3DS | INTERSIL |
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7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | |
HGT1S3N60B3DS9A | ETC |
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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB | |
HGT1S3N60B3S | INTERSIL |
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7A, 600V, UFS Series N-Channel IGBTs | |
HGT1S3N60B3S | ROCHESTER |
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7A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-4 | |
HGT1S3N60B3S9A | ETC |
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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB | |
HGT1S3N60C3D | HARRIS |
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6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | |
HGT1S3N60C3DS | HARRIS |
获取价格 |
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | |
HGT1S3N60C3DS | INTERSIL |
获取价格 |
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | |
HGT1S3N60C3DS9A | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3A I(C) | TO-263AB |