Datasheet > HGT1S2N120CNS

HGT1S2N120CNS

更新时间： 2024-02-28 16:34:28

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管电动机控制双极性晶体管栅
页数	文件大小	规格书
7页	92K
描述
13A, 1200V, NPT Series N-Channel IGBT

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技术参数
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HGT1S2N120CNS 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	not_compliant
风险等级：	5.01	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	13 A	集电极-发射极最大电压：	1200 V
配置：	SINGLE	最大降落时间（tf）：	320 ns
门极-发射极最大电压：	20 V	JEDEC-95代码：	TO-263AB
JESD-30 代码：	R-PSSO-G2	JESD-609代码：	e0
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	104 W
认证状态：	Not Qualified	最大上升时间（tr）：	15 ns
子类别：	Insulated Gate BIP Transistors	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子位置：	SINGLE	晶体管应用：	MOTOR CONTROL
晶体管元件材料：	SILICON	标称断开时间 (toff)：	585 ns
标称接通时间 (ton)：	32 ns	Base Number Matches：	1

HGT1S2N120CNS 数据手册

HGTD2N120CNS, HGTP2N120CN,

HGT1S2N120CNS

Data Sheet

January 2000

File Number 4680.2

13A, 1200V, NPT Series N-Channel IGBT

Features

The HGTD2N120CNS, HGTP2N120CN, and

• 13A, 1200V, T = 25 C

HGT1S2N120CNS are Non-Punch Through (NPT) IGBT

designs. They are new members of the MOS gated high

voltage switching IGBT family. IGBTs combine the best

features of MOSFETs and bipolar transistors. This device

has the high input impedance of a MOSFET and the low

on-state conduction loss of a bipolar transistor.

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 360ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Avalanche Rated

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

• Temperature Compensating SABER™ Model

Thermal Impedance SPICE Model

www.intersil.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly Developmental Type TA49313.

Ordering Information

Packaging

PART NUMBER

PACKAGE

BRAND

2N120CN

JEDEC TO-220AB

HGTP2N120CN

TO-220AB

HGTD2N120CNS

HGT1S2N120CNS

TO-252AA

TO-263AB

2N120C

COLLECTOR

(FLANGE)

2N120CN

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB and TO-252AA variant in Tape and Reel,

e.g., HGT1S2N120CNS9A.

Symbol

JEDEC TO-252AA

COLLECTOR

(FLANGE)

JEDEC TO-263AB

COLLECTOR

(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

SABER™ is a trademark of Analogy, Inc.

12 3 4 5 6 7

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与HGT1S2N120CNS相关器件

型号	品牌	获取价格	描述	数据表
HGT1S2N120CNS9A	RENESAS	获取价格	13A, 1200V, N-CHANNEL IGBT, TO-263AB
HGT1S3N60A4DS	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S3N60A4DS	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S3N60A4DS9A	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S3N60A4DS9A_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE
HGT1S3N60A4S	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT
HGT1S3N60A4S	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB
HGT1S3N60A4S9A	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB
HGT1S3N60B3DS	INTERSIL	获取价格	7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S3N60B3DS9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 3.5A I(C) \| TO-263AB

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