Datasheet > HGT1S2N120CN9A

HGT1S2N120CN9A

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		栅
页数	文件大小	规格书
9页	498K
描述
Insulated Gate Bipolar Transistor, 13A I(C), 1200V V(BR)CES, N-Channel

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HGT1S2N120CN9A 数据手册

March 2005

HGTP2N120CN, HGT1S2N120CN

13A, 1200V, NPT Series N-Channel IGBT

Features

Description

•

13A, 1200V, T = 25°C

The HGTP2N120CN and HGT1S2N120CN are Non-Punch

Through (NPT) IGBT designs. They are new members of the

MOS gated high voltage switching IGBT family. IGBTs combine

the best features of MOSFETs and bipolar transistors. This

device has the high input impedance of a MOSFET and the low

on-state conduction loss of a bipolar transistor.

1200V Switching SOA Capability

Typical Fall Time 360ns at T = 150°C

Short Circuit Rating

Low Conduction Loss

Avalanche Rated

The IGBT is ideal for many high voltage switching applications

operating at moderate frequencies where low conduction losses

are essential, such as: AC and DC motor controls, power sup-

plies and drivers for solenoids, relays and contactors.

Temperature Compensating SABER™ Model

Thermal Impedance SPICE Model

www.fairchildsemi.com

Formerly Developmental Type TA49313

•

Related Literature

TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Informations

Part Number

HGTP2N120CN

HGT1S2N120CN

Package

Brand

2N120CN

TO-220AB

TO-262

Note: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-

263AB and TO-252AA variant in tape and reel, e.g., HGT1S2N120CNS9A.

COLLECTOR

(FLANGE)

COLLECTOR

(FLANGE)

TO-220

TO-262

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGTP2N120CN, HGT1S2N120CN Rev. C

www.fairchildsemi.com

12 3 4 5 6 7...9

中文翻译

下载PDF

与HGT1S2N120CN9A相关器件

型号	品牌	获取价格	描述	数据表
HGT1S2N120CNDS	INTERSIL	获取价格	13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGT1S2N120CNDS9A	RENESAS	获取价格	13A, 1200V, N-CHANNEL IGBT, TO-263AB
HGT1S2N120CNS	INTERSIL	获取价格	13A, 1200V, NPT Series N-Channel IGBT
HGT1S2N120CNS	FAIRCHILD	获取价格	13A, 1200V, NPT Series N-Channel IGBT
HGT1S2N120CNS9A	RENESAS	获取价格	13A, 1200V, N-CHANNEL IGBT, TO-263AB
HGT1S3N60A4DS	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S3N60A4DS	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S3N60A4DS9A	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S3N60A4DS9A_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE
HGT1S3N60A4S	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT

与HGT1S2N120CN9A相关文章

L6234手册解读：引脚信息、电气参数
2024-07-01

1
解读BSP135H6327资料：电气参数及替换型号推荐
2024-07-01

1
FDG6302P资料解析：电气参数、产品特性
2024-07-01

3
SBAV99WT1G资料手册：参数信息、产品特性、替代型号推荐
2024-07-01

2

产品中心

服务支持

精选活动

关于我们

帮助中心

HGT1S2N120CN9A

HGT1S2N120CN9A 数据手册

与HGT1S2N120CN9A相关器件

与HGT1S2N120CN9A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HGT1S2N120CN9A

HGT1S2N120CN9A 数据手册

与HGT1S2N120CN9A相关器件

与HGT1S2N120CN9A相关文章

您还可以找

您在本页遇到什么问题？