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HGT1S1N120BNDS9A

更新时间： 2024-02-11 12:36:37
品牌 Logo 应用领域
其他 - ETC 晶体晶体管电动机控制瞄准线双极性晶体管栅
页数 文件大小 规格书
7页 104K
描述
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 5.3A I(C) | TO-263AB

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HGT1S1N120BNDS9A 技术参数

是否Rohs认证：不符合生命周期：Obsolete
Reach Compliance Code：compliant风险等级：5.13
Is Samacsys：N其他特性：LOW CONDUCTION LOSS
外壳连接：COLLECTOR最大集电极电流 (IC)：5.3 A
集电极-发射极最大电压：1200 V配置：SINGLE WITH BUILT-IN DIODE
最大降落时间（tf）：370 ns门极-发射极最大电压：20 V
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e0元件数量：1
端子数量：2最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：60 W
认证状态：Not Qualified最大上升时间（tr）：15 ns
子类别：Insulated Gate BIP Transistors表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：MOTOR CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：333 ns标称接通时间 (ton)：24 ns
Base Number Matches：1

HGT1S1N120BNDS9A 数据手册

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HGTP1N120BND, HGT1S1N120BNDS  
Data Sheet  
January 2000  
File Number 4650.2  
5.3A, 1200V, NPT Series N-Channel IGBT  
with Anti-Parallel Hyperfast Diode  
Features  
o
• 5.3A, 1200V, T = 25 C  
C
The HGTP1N120BND and the HGT1S1N120BNDS are  
Non-Punch Through (NPT) IGBT designs. They are new  
members of the MOS gated high voltage switching IGBT  
family. IGBTs combine the best features of MOSFETs and  
bipolar transistors. This device has the high input impedance  
of a MOSFET and the low on-state conduction loss of a  
bipolar transistor.  
• 1200V Switching SOA Capability  
• Typical E . . . . . . . . . . . . . . . . . . . 120µJ at T = 150 C  
o
OFF  
J
• Short Circuit Rating  
• Low Conduction Loss  
• Temperature Compensating SABER™ Model  
Thermal Impedance SPICE Model www.intersil.com/  
The IGBT is development type number TA49316. The diode  
used in anti-parallel with the IGBT is the RHRD4120  
(TA49056).  
• Related Literature  
- TB334, “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
The IGBT is ideal for many high voltage switching  
applications operating at moderate frequencies where low  
conduction losses are essential, such as: AC and DC motor  
controls, power supplies and drivers for solenoids, relays  
and contactors.  
Packaging  
JEDEC TO-220AB  
E
C
G
Formerly Developmental Type TA49314.  
COLLECTOR  
(FLANGE)  
Ordering Information  
PART NUMBER  
PACKAGE  
TO-220AB  
TO-263AB  
BRAND  
1N120BND  
1N120BND  
HGTP1N120BND  
HGT1S1N120BNDS  
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-263AB in tape and reel, i.e. HGT1S1N120BNDS9A.  
JEDEC TO-263AB  
Symbol  
COLLECTOR  
(FLANGE)  
C
G
E
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000  
SABER™ is a trademark of Analogy, Inc.  
1
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