Datasheet > HGT1S14N41G3VLS

HGT1S14N41G3VLS

更新时间： 2024-09-22 23:55:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管双极性晶体管栅汽车点火
页数	文件大小	规格书
8页	149K
描述
TRANSISTOR \| IGBT \| N-CHAN \| 445V V(BR)CES \| TO-220AB

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数据手册

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HGT1S14N41G3VLS 数据手册

HGT1S14N41G3VLS, HGTP14N41G3VL

Data Sheet

September 2000

File Number 4887

14A, 410V N-Channel, Logic Level, Voltage

Clamping IGBTs

Features

• Ignition Energy = 340mJ at T

= 25 C

J (STARTING)

This N-Channel IGBT is a MOS gated, logic level device

which is intended to be used as an ignition coil driver in

automotive ignition circuits. Unique features include an

active voltage clamp between the collector and the gate

which provides Self Clamped Inductive Switching (SCIS)

capability in ignition circuits. Internal diodes provide ESD

protection for the logic level gate. Both a series resistor and

a shunt resister are provided in the gate circuit

• Typical Internal Clamp Voltage = 410V at T = 25 C

• Logic Level Gate Drive

• ESD Gate Protection

• T = 175 C

• Internal Series and Shunt Gate Resistors

• 24V Reverse Battery Capability

• Related Literature

Formerly Developmental Type TA49360.

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Information

PART NUMBER

HGT1S14N41G3VLS

HGTP14N41G3VL

PACKAGE

TO-263AB

TO-220AB

BRAND

14N41GVL

Packaging

JEDEC TO-263AB

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB in tape and reel, i.e. HGT1S14N41G3VLS9A

COLLECTOR

(FLANGE)

Symbol

COLLECTOR

JEDEC TO-220AB

GATE

EMITTER

COLLECTOR

(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7 8

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与HGT1S14N41G3VLS相关器件

型号	品牌	获取价格	描述	数据表
HGT1S14N41G3VLS9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 395V V(BR)CES \| 18A I(C) \| TO-263AB
HGT1S14N41G3VLST	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 25A I(C), 445V V(BR)CES, N-Channel, TO-263AB
HGT1S14N41G3VLT	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 445V V(BR)CES \| 18A I(C) \| TO-263AB
HGT1S14N45G3VLS	RENESAS	获取价格	14A, N-CHANNEL IGBT, TO-263, TO-263, 3 PIN
HGT1S15N120C3	INTERSIL	获取价格	35A, 1200V, UFS Series N-Channel IGBTs
HGT1S15N120C3	RENESAS	获取价格	TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,35A I(C),TO-262AA
HGT1S15N120C3S	RENESAS	获取价格	TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,35A I(C),TO-263AB
HGT1S15N120C3S	INTERSIL	获取价格	35A, 1200V, UFS Series N-Channel IGBTs
HGT1S15N120C3S9A	RENESAS	获取价格	35A, 1200V, N-CHANNEL IGBT, TO-263AB
HGT1S1N120BNDS	INTERSIL	获取价格	5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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