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HGT1S14N41G3VLST PDF预览

HGT1S14N41G3VLST

更新时间： 2024-01-04 13:35:40
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 汽车点火栅晶体管
页数 文件大小 规格书
9页 259K
描述
Insulated Gate Bipolar Transistor, 25A I(C), 445V V(BR)CES, N-Channel, TO-263AB

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HGT1S14N41G3VLST 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：unknown风险等级：5.6
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：25 A集电极-发射极最大电压：445 V
配置：SINGLE WITH BUILT-IN DIODE AND RESISTORJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE晶体管应用：AUTOMOTIVE IGNITION
晶体管元件材料：SILICON标称断开时间 (toff)：9000 ns
标称接通时间 (ton)：3450 nsBase Number Matches：1

HGT1S14N41G3VLST 数据手册

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HGT1S14N41G3VLS, HGTP14N41G3VL  
Data Sheet  
September 2001  
File Number 4887  
14A, 410V N-Channel, Logic Level, Voltage  
Clamping IGBTs  
Features  
o
• Ignition Energy = 340mJ at T  
J (STARTING)  
= 25 C  
[ /Title  
(HGT1  
S14N4  
1G3V  
LS,  
HGTP  
14N41  
G3VL)  
/Subjec  
t (14A,  
410V  
N-  
Chann  
el,  
Logic  
Level,  
Voltag  
e
This N-Channel IGBT is a MOS gated, logic level device  
which is intended to be used as an ignition coil driver in  
automotive ignition circuits. Unique features include an  
active voltage clamp between the collector and the gate  
which provides Self Clamped Inductive Switching (SCIS)  
capability in ignition circuits. Internal diodes provide ESD  
protection for the logic level gate. Both a series resistor and  
a shunt resister are provided in the gate circuit  
o
• Typical Internal Clamp Voltage = 410V at T = 25 C  
J
• Logic Level Gate Drive  
• ESD Gate Protection  
o
• T = 175 C  
J
• Internal Series and Shunt Gate Resistors  
• 24V Reverse Battery Capability  
• Related Literature  
Formerly Developmental Type TA49360.  
- TB334, “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Ordering Information  
PART NUMBER  
HGT1S14N41G3VLS  
HGTP14N41G3VL  
PACKAGE  
TO-263AB  
TO-220AB  
BRAND  
14N41GVL  
14N41GVL  
Packaging  
JEDEC TO-263AB  
NOTE: When ordering, use the entire part number. To obtain the TO-  
263AB in tape and reel, drop the S and add the suffix T; i.e.  
HGT1S14N41G3VLT  
COLLECTOR  
(FLANGE)  
G
E
Symbol  
Clampi  
ng  
IGBTs  
)
COLLECTOR  
JEDEC TO-220AB  
/Autho  
r ()  
R
1
GATE  
E
C
/Keyw  
ords  
R
2
G
(14A,  
410V  
N-  
EMITTER  
COLLECTOR  
(FLANGE)  
Chann  
el,  
Logic  
Level,  
Voltag  
e
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
Clampi  
ng  
IGBTs,  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
©2001 Fairchild Semiconductor Corporation  
HGT1S14N41G3VLS, HGTP14N41G3VL Rev. A1  
1234567...9

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