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HGT1S15N120C3S

更新时间： 2024-09-25 20:23:07
品牌 Logo 应用领域
瑞萨 - RENESAS 电动机控制栅双极性晶体管
页数 文件大小 规格书
11页 139K
描述
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,35A I(C),TO-263AB

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中文翻译

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HGT1S15N120C3S 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
Reach Compliance Code：not_compliant风险等级：5.68
Is Samacsys：N最大集电极电流 (IC)：35 A
集电极-发射极最大电压：1200 V最大降落时间（tf）：400 ns
门极发射器阈值电压最大值：7.5 V门极-发射极最大电压：20 V
JESD-609代码：e0最高工作温度：150 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：164 W
子类别：Insulated Gate BIP Transistors表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)Base Number Matches：1

HGT1S15N120C3S 数据手册

 浏览型号HGT1S15N120C3S的Datasheet PDF文件第2页浏览型号HGT1S15N120C3S的Datasheet PDF文件第3页浏览型号HGT1S15N120C3S的Datasheet PDF文件第4页浏览型号HGT1S15N120C3S的Datasheet PDF文件第5页浏览型号HGT1S15N120C3S的Datasheet PDF文件第6页浏览型号HGT1S15N120C3S的Datasheet PDF文件第7页 
HGTG15N120C3, HGTP15N120C3,  
HGT1S15N120C3, HGT1S15N120C3S  
35A, 1200V, UFS Series N-Channel IGBTs  
June 1997  
Features  
Description  
o
• 35A, 1200V, T = 25 C  
C
The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3  
and HGT1S15N120C3S are MOS gated high voltage switching  
devices combining the best features of MOSFETs and bipolar  
• 1200V Switching SOA Capability  
o
transistors. These devices have the high input impedance of a  
MOSFET and the low on-state conduction loss of a bipolar tran-  
sistor. The much lower on-state voltage drop varies only moder-  
• Typical Fall Time . . . . . . . . . . . . . . 350ns at T = 150 C  
J
• Short Circuit Rating  
• Low Conduction Loss  
o
o
ately between 25 C and 150 C.  
The IGBT is ideal for many high voltage switching applications  
operating at moderate frequencies where low conduction  
losses are essential, such as: AC and DC motor controls,  
power supplies and drivers for solenoids, relays and contactors.  
Ordering Information  
PART NUMBER  
HGTG15N120C3  
HGTP15N120C3  
HGT1S15N120C3  
HGT1S15N120C3S  
PACKAGE  
BRAND  
15N120C3  
TO-247  
TO-220AB  
TO-262AA  
TO-263AB  
15N120C3  
15N120C3  
15N120C3  
Symbol  
C
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-263 variant in tape and reel; i.e.,  
HGT1S15N120C3S9A.  
G
E
Formerly Developmental Type TA49145.  
Packaging  
JEDEC STYLE TO-247  
JEDEC TO-220AB (ALTERNATE VERSION)  
EMITTER  
COLLECTOR  
GATE  
EMITTER  
COLLECTOR  
GATE  
COLLECTOR  
(FLANGE)  
COLLECTOR  
(FLANGE)  
JEDEC TO-262AA  
JEDEC TO-263AB  
EMITTER  
COLLECTOR  
GATE  
M
A
COLLECTOR  
(FLANGE)  
GATE  
COLLECTOR  
(FLANGE)  
EMITTER  
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,587,713  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,417,385  
4,598,461  
4,644,637  
4,801,986  
4,883,767  
4,430,792  
4,605,948  
4,682,195  
4,803,533  
4,888,627  
4,443,931  
4,618,872  
4,684,413  
4,809,045  
4,890,143  
4,466,176  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,516,143  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,532,534  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,567,641  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 4244.3  
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
1
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HGT1S1N120BNDS INTERSIL

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 		20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
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 		20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
HGT1S20N35G3VLS9A ETC

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 		TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 20A I(C) | TO-263AB

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