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HGT1S14N36G3VLST

更新时间： 2024-01-29 19:18:06
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管双极性晶体管栅汽车点火
页数 文件大小 规格书
8页 224K
描述
Insulated Gate Bipolar Transistor, 18A I(C), N-Channel, TO-263AB

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HGT1S14N36G3VLST 技术参数

生命周期：Obsolete零件包装代码：D2PAK
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.61外壳连接：COLLECTOR
最大集电极电流 (IC)：18 A配置：SINGLE WITH BUILT-IN DIODE AND RESISTOR
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e3元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子面层：MATTE TIN
端子形式：GULL WING端子位置：SINGLE
晶体管应用：AUTOMOTIVE IGNITION晶体管元件材料：SILICON
标称断开时间 (toff)：7000 nsBase Number Matches：1

HGT1S14N36G3VLST 数据手册

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HGTP14N36G3VL,  
HGT1S14N36G3VL,  
HGT1S14N36G3VLS  
14A, 360V N-Channel,  
Logic Level, Voltage Clamping IGBTs  
December 2001  
Features  
Packages  
JEDEC TO-220AB  
• Logic Level Gate Drive  
• Internal Voltage Clamp  
• ESD Gate Protection  
• TJ = 175oC  
EMITTER  
COLLECTOR  
GATE  
COLLECTOR  
(FLANGE)  
• Ignition Energy Capable  
JEDEC TO-262AA  
Description  
EMITTER  
COLLECTOR  
This N-Channel IGBT is a MOS gated, logic level device  
which is intended to be used as an ignition coil driver in auto-  
motive ignition circuits. Unique features include an active  
voltage clamp between the collector and the gate which pro-  
vides Self Clamped Inductive Switching (SCIS) capability in  
ignition circuits. Internal diodes provide ESD protection for  
the logic level gate. Both a series resistor and a shunt  
resister are provided in the gate circuit.  
GATE  
COLLECTOR  
(FLANGE)  
JEDEC TO-263AB  
COLLECTOR  
(FLANGE)  
PACKAGING AVAILABILITY  
GATE  
EMITTER  
PART NUMBER  
HGTP14N36G3VL  
HGT1S14N36G3VL  
HGT1S14N36G3VLS  
PACKAGE  
TO-220AB  
TO-262AA  
TO-263AB  
BRAND  
14N36GVL  
14N36GVL  
14N36GVL  
Terminal Diagram  
N-CHANNEL ENHANCEMENT MODE  
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-263AB variant in the tape and reel, i.e.,  
HGT1S14N36G3VLS9A.  
COLLECTOR  
The development type number for this device is TA49021.  
R1  
GATE  
R2  
EMITTER  
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified  
C
HGTP14N36G3VL,  
HGT1S14N36G3VL,  
HGT1S14N36G3VLS  
UNITS  
Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV  
390  
24  
18  
V
V
A
CER  
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV  
ECS  
o
Collector Current Continuous at V = 5V, T = +25 C. . . . . . . . . . . . . . . . . . . . . . . I  
GE  
C
C25  
o
at V = 5V, T = +100 C. . . . . . . . . . . . . . . . . . . . . . I  
14  
A
GE  
C
C100  
Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
±10  
17  
12  
V
A
A
GEM  
SCIS  
SCIS  
o
Inductive Switching Current at L = 2.3mH, T = +25 C . . . . . . . . . . . . . . . . . . . . . . . I  
C
o
at L = 2.3mH, T = + 175 C . . . . . . . . . . . . . . . . . . . . . . I  
C
o
Collector to Emitter Avalanche Energy at L = 2.3mH, T = +25 C. . . . . . . . . . . . . . . E  
Power Dissipation Total at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
Power Dissipation Derating T > +25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
332  
100  
0.67  
-40 to +175  
260  
6
mJ  
W
C
AS  
o
C
D
o
o
W/ C  
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T , T  
C
C
J
STG  
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
Electrostatic Voltage at 100pF, 1500Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD  
L
KV  
NOTE: May be exceeded if I is limited to 10mA.  
GEM  
©2001 Fairchild Semiconductor Corporation  
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B  
12345678

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