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HGT1S14N36G3VLT

更新时间： 2024-11-25 23:55:47
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页数 文件大小 规格书
11页 293K
描述
TRANSISTOR | IGBT | N-CHAN | 350V V(BR)CES | 14A I(C) | TO-263AB

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HGT1S14N36G3VLT 数据手册

 浏览型号HGT1S14N36G3VLT的Datasheet PDF文件第2页浏览型号HGT1S14N36G3VLT的Datasheet PDF文件第3页浏览型号HGT1S14N36G3VLT的Datasheet PDF文件第4页浏览型号HGT1S14N36G3VLT的Datasheet PDF文件第5页浏览型号HGT1S14N36G3VLT的Datasheet PDF文件第6页浏览型号HGT1S14N36G3VLT的Datasheet PDF文件第7页 
HGTP14N36G3VL,  
HGT1S14N36G3VL,  
HGT1S14N36G3VLS  
14A, 360V N-Channel,  
Logic Level, Voltage Clamping IGBTs  
September 2001  
Features  
Packages  
JEDEC TO-220AB  
• Logic Level Gate Drive  
• Internal Voltage Clamp  
• ESD Gate Protection  
• TJ = 175oC  
EMITTER  
COLLECTOR  
GATE  
COLLECTOR  
(FLANGE)  
• Ignition Energy Capable  
JEDEC TO-262AA  
Description  
EMITTER  
COLLECTOR  
This N-Channel IGBT is a MOS gated, logic level device  
which is intended to be used as an ignition coil driver in auto-  
motive ignition circuits. Unique features include an active  
voltage clamp between the collector and the gate which pro-  
vides Self Clamped Inductive Switching (SCIS) capability in  
ignition circuits. Internal diodes provide ESD protection for  
the logic level gate. Both a series resistor and a shunt  
resister are provided in the gate circuit.  
GATE  
COLLECTOR  
(FLANGE)  
JEDEC TO-263AB  
COLLECTOR  
(FLANGE)  
M
PACKAGING AVAILABILITY  
GATE  
PART NUMBER  
HGTP14N36G3VL  
HGT1S14N36G3VL  
HGT1S14N36G3VLS  
PACKAGE  
TO-220AB  
TO-262AA  
TO-263AB  
BRAND  
14N36GVL  
EMITTER  
14N36GVL  
14N36GVL  
Terminal Diagram  
N-CHANNEL ENHANCEMENT MODE  
COLLECTOR  
NOTE: When ordering, use the entire part number. To obtain the TO-  
263AB in tape and reel, drop the S and add the suffix T; i.e.,  
HGT1S14N36G3VLT.  
The development type number for this device is TA49021.  
R1  
GATE  
R2  
EMITTER  
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified  
C
HGTP14N36G3VL,  
HGT1S14N36G3VL,  
HGT1S14N36G3VLS  
UNITS  
Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV  
390  
24  
18  
V
V
A
CER  
ECS  
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV  
o
Collector Current Continuous at V = 5V, T = +25 C. . . . . . . . . . . . . . . . . . . . . . . I  
GE  
C
C25  
o
at V = 5V, T = +100 C. . . . . . . . . . . . . . . . . . . . . .I  
14  
A
GE  
C
C100  
Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
±10  
17  
12  
V
A
A
GEM  
SCIS  
SCIS  
o
Inductive Switching Current at L = 2.3mH, T = +25 C . . . . . . . . . . . . . . . . . . . . . . .I  
C
o
at L = 2.3mH, T = + 175 C . . . . . . . . . . . . . . . . . . . . . .I  
C
o
Collector to Emitter Avalanche Energy at L = 2.3mH, T = +25 C. . . . . . . . . . . . . . . E  
Power Dissipation Total at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
Power Dissipation Derating T > +25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
332  
100  
0.67  
-40 to +175  
260  
6
mJ  
W
C
AS  
o
C
D
o
o
W/ C  
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T , T  
C
C
J
STG  
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T  
Electrostatic Voltage at 100pF, 1500W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD  
L
KV  
NOTE: May be exceeded if I is limited to 10mA.  
GEM  
©2001 Fairchild Semiconductor Corporation  
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. A1  
1234567...11

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