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HGT1S12N60C3DRS9A PDF预览

HGT1S12N60C3DRS9A

更新时间： 2023-01-03 01:40:15
品牌 Logo 应用领域
瑞萨 - RENESAS 电动机控制栅瞄准线开关晶体管
页数 文件大小 规格书
7页 94K
描述
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB

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中文翻译

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HGT1S12N60C3DRS9A 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
风险等级：5.01其他特性：LOW CONDUCTION LOSS, ULTRA FAST
外壳连接：COLLECTOR最大集电极电流 (IC)：24 A
集电极-发射极最大电压：600 V配置：SINGLE WITH BUILT-IN DIODE
最大降落时间（tf）：400 ns门极发射器阈值电压最大值：7.5 V
门极-发射极最大电压：20 VJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e0
元件数量：1端子数量：2
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：104 W
认证状态：Not Qualified最大上升时间（tr）：38 ns
子类别：Insulated Gate BIP Transistors表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：SINGLE晶体管应用：MOTOR CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：540 ns
标称接通时间 (ton)：74 nsBase Number Matches：1

HGT1S12N60C3DRS9A 数据手册

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HGTG12N60C3DR,  
HGTP12N60C3DR, HGT1S12N60C3DRS  
Data Sheet  
June 2000  
File Number 4467.1  
24A, 600V, Rugged, UFS Series N-Channel  
IGBTs with Anti-Parallel Ultrafast Diodes  
Features  
o
• 24A, 600V at T = 25 C  
C
[ /Title  
(HGT  
G12N6  
0C3D  
R,  
HGTP  
12N60  
C3DR,  
HGT1  
S12N6  
0C3D  
RS)  
This family of IGBTs was designed for optimum performance  
in the demanding world of motor control operation as well as  
other high voltage switching applications. These devices  
demonstrate RUGGED performance capability when  
subjected to harsh SHORT CIRCUIT WITHSTAND TIME  
(SCWT) conditions. The parts have ULTRAFAST (UFS)  
switching speed while the on-state conduction losses have  
been kept at a low level.  
• 600V Switching SOA Capability  
o
• Typical Fall Time at T = 150 C . . . . . . . . . . . . . . . . 250ns  
J
o
• Short Circuit Rating at T = 150 C. . . . . . . . . . . . . . .10µs  
J
• Low Conduction Loss  
• Ultrafast Anti-Parallel Diode  
• Related Literature  
The electrical specifications include typical Turn-On and  
Turn-Off dv/dt ratings. These ratings and the Turn-On ratings  
include the effect of the diode in the test circuit (Figure 17).  
- TB334, “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
The data was obtained with the diode at the same T as the  
Packaging  
J
IGBT under test. The diode used in anti-parallel with the  
IGBT is development type TA49213. The IGBT is  
development type TA49118.  
JEDEC TO-220AB (ALTERNATE VERSION)  
/Sub-  
ject  
E
C
G
(24A,  
600V,  
Rug-  
ged,  
UFS  
Series  
N-  
Formerly development type TA49124.  
COLLECTOR  
(FLANGE)  
Ordering Information  
PART NUMBER  
HGTP12N60C3DR  
HGT1S12N60C3DRS  
HGTG12N60C3DR  
PACKAGE  
BRAND  
12N60CDR  
TO-220AB  
TO-263AB  
TO-247  
12N60CDR  
JEDEC TO-247AB  
12N60C3DR  
Chan-  
nel  
IGBT  
with  
Anti-  
Paral-  
lel  
E
C
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-263AB variant in tape and reel, ie.,  
HGT1S12N60C3DRS9A.  
G
Symbol  
COLLECTOR  
(BOTTOM SIDE  
MEDAL)  
C
Ultrafa  
st  
Diode)  
/Autho  
r ()  
/Key-  
words  
(24A,  
600V,  
Rug-  
ged,  
G
JEDEC TO-263AB  
COLLECTOR  
E
(FLANGE)  
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
UFS  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000  
2-1  
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HGT1S12N60C3S9A FAIRCHILD

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 		TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB

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