生命周期: | Obsolete | 零件包装代码: | D2PAK |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.61 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 18 A | 配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | AUTOMOTIVE IGNITION | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 7000 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HGT1S14N36G3VLS_NL | FAIRCHILD |
获取价格 |
暂无描述 | |
HGT1S14N36G3VLS9A | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 390V V(BR)CES | 18A I(C) | TO-263AB | |
HGT1S14N36G3VLST | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 18A I(C), N-Channel, TO-263AB | |
HGT1S14N36G3VLT | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 350V V(BR)CES | 14A I(C) | TO-263AB | |
HGT1S14N36G3VLT_NL | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 18A I(C), N-Channel, TO-263AB, LEAD FREE PACKAGE-3 | |
HGT1S14N37G3VLS | ROCHESTER |
获取价格 |
25 A, N-CHANNEL IGBT, TO-263AB, TO-263AB, 3 PIN | |
HGT1S14N37G3VLS | FAIRCHILD |
获取价格 |
14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs | |
HGT1S14N37G3VLS | RENESAS |
获取价格 |
25A, N-CHANNEL IGBT, TO-263AB | |
HGT1S14N37G3VLS9A | FAIRCHILD |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 18A I(C) | TO-263AB | |
HGT1S14N40F3VLS | FAIRCHILD |
获取价格 |
330mJ, 400V, N-Channel Ignition IGBT |