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HGT1S12N60C3DST PDF预览

HGT1S12N60C3DST

更新时间： 2024-02-04 08:40:28
品牌 Logo 应用领域
其他 - ETC 晶体晶体管双极性晶体管
页数 文件大小 规格书
10页 213K
描述
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB

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中文翻译

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HGT1S12N60C3DST 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：unknown
风险等级：5Is Samacsys：N
其他特性：LOW CONDUCTION LOSS外壳连接：COLLECTOR
最大集电极电流 (IC)：24 A集电极-发射极最大电压：600 V
配置：SINGLE最大降落时间（tf）：275 ns
门极发射器阈值电压最大值：6 V门极-发射极最大电压：20 V
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e0元件数量：1
端子数量：2最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：104 W
认证状态：Not Qualified子类别：Insulated Gate BIP Transistors
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：MOTOR CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：480 ns
标称接通时间 (ton)：30 nsBase Number Matches：1

HGT1S12N60C3DST 数据手册

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HGTP12N60C3D, HGT1S12N60C3DS  
Data Sheet  
September 2001  
File Number 4261.1  
24A, 600V, UFS Series N-Channel IGBT  
with Anti-Parallel Hyperfast Diodes  
Features  
o
• 24A, 600V at T = 25 C  
C
This family of MOS gated high voltage switching devices  
combine the best features of MOSFETs and bipolar  
transistors. The device has the high input impedance of a  
MOSFET and the low on-state conduction loss of a bipolar  
transistor. The much lower on-state voltage drop varies only  
moderately between 25 C and 150 C. The IGBT used is the  
development type TA49123. The diode used in anti-parallel  
with the IGBT is the development type TA49188.  
o
• Typical Fall Time at T = 150 C . . . . . . . . . . . . . . . . 210ns  
J
• Short Circuit Rating  
• Low Conduction Loss  
• Hyperfast Anti-Parallel Diode  
o
o
Packaging  
JEDEC TO-220AB  
The IGBT is ideal for many high voltage switching  
applications operating at moderate frequencies where low  
conduction losses are essential.  
E
C
G
COLLECTOR  
(FLANGE)  
Formerly Developmental Type TA49182.  
Ordering Information  
PART NUMBER  
HGTP12N60C3D  
HGT1S12N60C3DS  
PACKAGE  
TO-220AB  
TO-263AB  
BRAND  
12N60C3D  
12N60C3D  
JEDEC TO-263AB  
COLLECTOR  
(FLANGE)  
NOTE: When ordering, use the entire part number. Add the suffix T  
to obtain the TO-263 variant in Tape and Reel, i.e.,  
HGT1S12N60C3DST.  
G
E
Symbol  
C
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
©2001 Fairchild Semiconductor Corporation  
HGTP12N60C3D, HGT1S12N60C3DS Rev. A1  
1234567...10

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