Datasheet > 晶体管 > IGBT> HGT1S12N60C3S9A

HGT1S12N60C3S9A

更新时间： 2024-01-30 03:22:16

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管电动机控制瞄准线双极性晶体管栅
页数	文件大小	规格书
7页	173K
描述
TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 12A I(C) \| TO-263AB

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中文翻译

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技术参数
数据手册

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HGT1S12N60C3S9A 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	unknown	风险等级：	5.01
Is Samacsys：	N	其他特性：	LOW CONDUCTION LOSS
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	24 A
集电极-发射极最大电压：	600 V	配置：	SINGLE
JEDEC-95代码：	TO-263AB	JESD-30 代码：	R-PSSO-G2
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	SINGLE
晶体管应用：	MOTOR CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	480 ns	标称接通时间 (ton)：	30 ns
Base Number Matches：	1

HGT1S12N60C3S9A 数据手册

HGTP12N60C3, HGT1S12N60C3S

Data Sheet

December 2001

24A, 600V, UFS Series N-Channel IGBTs

Features

The HGTP12N60C3 and HGT1S12N60C3S are MOS gated

high voltage switching devices combining the best features

of MOSFETs and bipolar transistors. These devices have the

high input impedance of a MOSFET and the low on-state

conduction loss of a bipolar transistor. The much lower

• 24A, 600V at T = 25 C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 230ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

on-state voltage drop varies only moderately between 25 C

and 150 C.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Packaging

JEDEC TO-220AB

EMITTER

COLLECTOR

GATE

Formerly Developmental Type TA49123.

COLLECTOR

(FLANGE)

Ordering Information

PART NUMBER

PACKAGE

TO-220AB

TO-263AB

BRAND

P12N60C3

S12N60C3

HGTP12N60C3

HGT1S12N60C3S

JEDEC TO-263AB

COLLECTOR

NOTE: When ordering, use the entire part number. Add the suffix 9A

to obtain the TO-263AB variant in Tape and Reel, i.e.,

HGT1S12N60C3S9A.

GATE

(FLANGE)

Symbol

EMITTER

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGTP12N60C3, HGT1S12N60C3S Rev. B

12 3 4 5 6 7

中文翻译

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与HGT1S12N60C3S9A相关器件

型号	品牌	获取价格	描述	数据表
HGT1S14N36G3VL	FAIRCHILD	获取价格	14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
HGT1S14N36G3VL	INTERSIL	获取价格	14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
HGT1S14N36G3VLS	FAIRCHILD	获取价格	14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
HGT1S14N36G3VLS	INTERSIL	获取价格	14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
HGT1S14N36G3VLS_NL	FAIRCHILD	获取价格	暂无描述
HGT1S14N36G3VLS9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 390V V(BR)CES \| 18A I(C) \| TO-263AB
HGT1S14N36G3VLST	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 18A I(C), N-Channel, TO-263AB
HGT1S14N36G3VLT	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 350V V(BR)CES \| 14A I(C) \| TO-263AB
HGT1S14N36G3VLT_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 18A I(C), N-Channel, TO-263AB, LEAD FREE PACKAGE-3
HGT1S14N37G3VLS	ROCHESTER	获取价格	25 A, N-CHANNEL IGBT, TO-263AB, TO-263AB, 3 PIN

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