Datasheet > HGT1S12N60B3S9A

HGT1S12N60B3S9A

更新时间： 2024-01-14 02:10:46

品牌	Logo	应用领域
其他 - ETC		晶体晶体管双极性晶体管
页数	文件大小	规格书
8页	267K
描述
TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 12A I(C) \| TO-263AB

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HGT1S12N60B3S9A 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	compliant
风险等级：	5.01	其他特性：	LOW CONDUCTION LOSS
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	27 A
集电极-发射极最大电压：	600 V	配置：	SINGLE
门极发射器阈值电压最大值：	6 V	门极-发射极最大电压：	20 V
JEDEC-95代码：	TO-263AB	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e0	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	104 W
认证状态：	Not Qualified	子类别：	Insulated Gate BIP Transistors
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	MOTOR CONTROL
晶体管元件材料：	SILICON	标称断开时间 (toff)：	392 ns
标称接通时间 (ton)：	45 ns	Base Number Matches：	1

HGT1S12N60B3S9A 数据手册

HGTG12N60B3, HGTP12N60B3,

HGT1S12N60B3S

Data Sheet

April 2002

27A, 600V, UFS Series N-Channel IGBTs

Features

This family of MOS gated high voltage switching devices

combine the best features of MOSFETs and bipolar

• 27A, 600V, T = 25 C

• 600V Switching SOA Capability

transistors. These devices have the high input impedance of

a MOSFET and the low on-state conduction loss of a bipolar

transistor. The much lower on-state voltage drop varies only

• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

moderately between 25 C and 150 C.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Packaging

JEDEC TO-220AB (ALTERNATE VERSION)

COLLECTOR

(FLANGE)

Formerly developmental type TA49171.

Ordering Information

PART NUMBER

PACKAGE

BRAND

G12N60B3

HGTP12N60B3

TO-220AB

JEDEC TO-263AB

HGTG12N60B3

TO-247

G12N60B3

HGT1S12N60B3S

TO-263AB

NOTE: When ordering, use the entire part number. Add the suffix 9A

to obtain the TO-263AB variant in tape and reel, i.e.

HGT1S12N60B3S9A.

COLLECTOR

(FLANGE)

Symbol

JEDEC STYLE TO-247

COLLECTOR

(BOTTOM SIDE METAL)

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C

12 3 4 5 6 7 8

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与HGT1S12N60B3S9A相关器件

型号	品牌	描述	获取价格	数据表
HGT1S12N60C3	HARRIS	24A, 600V, UFS Series N-Channel IGBTs	获取价格
HGT1S12N60C3D	RENESAS	TRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,24A I(C),TO-262AA	获取价格
HGT1S12N60C3DRS9A	RENESAS	Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB	获取价格
HGT1S12N60C3DS	INTERSIL	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes	获取价格
HGT1S12N60C3DS	FAIRCHILD	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes	获取价格
HGT1S12N60C3DS9A	ETC	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 12A I(C) \| TO-263AB	获取价格

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