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HGT1S12N60B3S9A PDF预览

HGT1S12N60B3S9A

更新时间： 2024-02-21 11:01:48
品牌 Logo 应用领域
其他 - ETC 晶体晶体管双极性晶体管
页数 文件大小 规格书
8页 267K
描述
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB

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HGT1S12N60B3S9A 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：compliant
风险等级：5.01其他特性：LOW CONDUCTION LOSS
外壳连接：COLLECTOR最大集电极电流 (IC)：27 A
集电极-发射极最大电压：600 V配置：SINGLE
门极发射器阈值电压最大值：6 V门极-发射极最大电压：20 V
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e0元件数量：1
端子数量：2最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：104 W
认证状态：Not Qualified子类别：Insulated Gate BIP Transistors
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：MOTOR CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：392 ns
标称接通时间 (ton)：45 nsBase Number Matches：1

HGT1S12N60B3S9A 数据手册

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGNꢀ FAIRCHILD  
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT  
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PRODUCT STATUS DEFINITIONS  
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Revꢀ H5  
1...5678

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HGT1S12N60C3DRS9A RENESAS Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB

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HGT1S12N60C3DS FAIRCHILD 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

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HGT1S12N60C3DS9A ETC TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB

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