Datasheet > HGT1S12N60C3

HGT1S12N60C3

更新时间： 2024-02-04 20:12:20

品牌	Logo	应用领域
哈里斯 - HARRIS		晶体晶体管电动机控制瞄准线双极性晶体管栅
页数	文件大小	规格书
6页	135K
描述
24A, 600V, UFS Series N-Channel IGBTs

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HGT1S12N60C3 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	unknown
风险等级：	5	Is Samacsys：	N
其他特性：	LOW CONDUCTION LOSS	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	24 A	集电极-发射极最大电压：	600 V
配置：	SINGLE	最大降落时间（tf）：	275 ns
门极发射器阈值电压最大值：	6 V	门极-发射极最大电压：	20 V
JEDEC-95代码：	TO-263AB	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e0	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	104 W
认证状态：	Not Qualified	子类别：	Insulated Gate BIP Transistors
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	MOTOR CONTROL
晶体管元件材料：	SILICON	标称断开时间 (toff)：	480 ns
标称接通时间 (ton)：	30 ns	Base Number Matches：	1

HGT1S12N60C3 数据手册

HGTP12N60C3, HGT1S12N60C3,

HGT1S12N60C3S

S E M I C O N D U C T O R

24A, 600V, UFS Series N-Channel IGBTs

January 1997

Features

Description

• 24A, 600V at T = 25 C

The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S

are MOS gated high voltage switching devices combining the

best features of MOSFETs and bipolar transistors. These

• 600V Switching SOA Capability

• Typical Fall Time . . . . . . . . . . . . . . 230ns at T = 150 C

devices have the high input impedance of a MOSFET and the

low on-state conduction loss of a bipolar transistor. The much

lower on-state voltage drop varies only moderately between

• Short Circuit Rating

• Low Conduction Loss

25 C and 150 C.

The IGBT is ideal for many high voltage switching applications

operating at moderate frequencies where low conduction losses

are essential, such as: AC and DC motor controls, power sup-

plies and drivers for solenoids, relays and contactors.

Ordering Information

PART NUMBER

HGTP12N60C3

PACKAGE

TO-220AB

BRAND

P12N60C3

HGT1S12N60C3

HGT1S12N60C3S

TO-262AA

TO-263AB

S12N60C3

Terminal Diagram

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB variant in Tape and Reel, i.e.,

HGT1S12N60C3S9A.

N-CHANNEL ENHANCEMENT MODE

Formerly Developmental Type TA49123.

Packaging

JEDEC TO-220AB

JEDEC TO-262AA

EMITTER

COLLECTOR

GATE

EMITTER

COLLECTOR

GATE

COLLECTOR

(FLANGE)

COLLECTOR

(FLANGE)

JEDEC TO-263AB

COLLECTOR

(FLANGE)

GATE

EMITTER

HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073

4,587,713

4,641,162

4,794,432

4,860,080

4,969,027

4,417,385

4,598,461

4,644,637

4,801,986

4,883,767

4,430,792

4,605,948

4,682,195

4,803,533

4,888,627

4,443,931

4,618,872

4,684,413

4,809,045

4,890,143

4,466,176

4,620,211

4,694,313

4,809,047

4,901,127

4,516,143

4,631,564

4,717,679

4,810,665

4,904,609

4,532,534

4,639,754

4,743,952

4,823,176

4,933,740

4,567,641

4,639,762

4,783,690

4,837,606

4,963,951

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

File Number 4040.3

3-29

12 3 4 5 6

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与HGT1S12N60C3相关器件

型号	品牌	描述	获取价格	数据表
HGT1S12N60C3D	RENESAS	TRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,24A I(C),TO-262AA	获取价格
HGT1S12N60C3DRS9A	RENESAS	Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB	获取价格
HGT1S12N60C3DS	INTERSIL	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes	获取价格
HGT1S12N60C3DS	FAIRCHILD	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes	获取价格
HGT1S12N60C3DS9A	ETC	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 12A I(C) \| TO-263AB	获取价格
HGT1S12N60C3DST	ETC	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 12A I(C) \| TO-263AB	获取价格

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