5秒后页面跳转
捷配首页

Datasheet > HGT1S12N60C3
HGT1S12N60C3 PDF预览

HGT1S12N60C3

更新时间： 2024-01-16 08:39:49
品牌 Logo 应用领域
哈里斯 - HARRIS 晶体晶体管电动机控制瞄准线双极性晶体管栅
页数 文件大小 规格书
6页 135K
描述
24A, 600V, UFS Series N-Channel IGBTs

阅读下载

获取价格

HGT1S12N60C3 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：unknown
风险等级：5Is Samacsys：N
其他特性：LOW CONDUCTION LOSS外壳连接：COLLECTOR
最大集电极电流 (IC)：24 A集电极-发射极最大电压：600 V
配置：SINGLE最大降落时间（tf）：275 ns
门极发射器阈值电压最大值：6 V门极-发射极最大电压：20 V
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e0元件数量：1
端子数量：2最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：104 W
认证状态：Not Qualified子类别：Insulated Gate BIP Transistors
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：MOTOR CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：480 ns
标称接通时间 (ton)：30 nsBase Number Matches：1

HGT1S12N60C3 数据手册

 浏览型号HGT1S12N60C3的Datasheet PDF文件第1页浏览型号HGT1S12N60C3的Datasheet PDF文件第2页浏览型号HGT1S12N60C3的Datasheet PDF文件第3页浏览型号HGT1S12N60C3的Datasheet PDF文件第4页浏览型号HGT1S12N60C3的Datasheet PDF文件第5页 
HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S  
Test Circuit and Waveform  
90%  
OFF  
L = 100µH  
10%  
V
RHRP1560  
GE  
E
E
ON  
V
CE  
R
= 25Ω  
G
90%  
+
-
10%  
D(OFF)I  
V
= 480V  
DD  
I
CE  
t
t
RI  
t
FI  
t
D(ON)I  
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT  
FIGURE 19. SWITCHING TEST WAVEFORMS  
Handling Precautions for IGBTs  
Operating Frequency Information  
Insulated Gate Bipolar Transistors are susceptible to gate- Operating frequency information for  
a typical device  
insulation damage by the electrostatic discharge of energy Figure 13) is presented as a guide for estimating device per-  
through the devices. When handling these devices, care formance for a specific application. Other typical frequency  
should be exercised to assure that the static charge built in vs collector current (I ) plots are possible using the infor-  
CE  
the handler’s body capacitance is not discharged through mation shown for a typical unit in Figures 4, 7, 8, 11 and 12.  
the device. With proper handling and application procedures, The operating frequency plot (Figure 13) of a typical device  
however, IGBTs are currently being extensively used in pro- shows f  
or f  
whichever is smaller at each point.  
MAX1  
MAX2  
duction by numerous equipment manufacturers in military, The information is based on measurements of  
a
industrial and consumer applications, with virtually no dam- typical device and is bounded by the maximum rated junc-  
age problems due to electrostatic discharge. IGBTs can be tion temperature.  
handled safely if the following basic precautions are taken:  
f
is defined by f  
= 0.05/(t  
MAX1  
+ t ). Dead-  
D(OFF)I D(ON)I  
MAX1  
1. Prior to assembly into a circuit, all leads should be kept  
time (the denominator) has been arbitrarily held to 10% of  
shorted together either by the use of metal shorting the on- state time for a 50% duty factor. Other definitions are  
springs or by the insertion into conductive material such possible. t and t are defined in Figure 19.  
D(OFF)I  
Device turn-off delay can establish an additional frequency  
limiting condition for an application other than T  
D(ON)I  
as “ECCOSORBD LD26” or equivalent.  
.
JMAX  
is important when controlling output ripple under a  
2. When devices are removed by hand from their carriers,  
the hand being used should be grounded by any suitable  
means - for example, with a metallic wristband.  
t
D(OFF)I  
lightly loaded condition.  
f
is defined by f  
MAX2  
= (P - P )/(E  
OFF  
+ E ). The  
ON  
MAX2  
D
C
3. Tips of soldering irons should be grounded.  
allowable dissipation (P ) is defined by P = (T  
-
D
D
JMAX  
T )/R . The sum of device switching and conduction losses  
4. Devices should never be inserted into or removed from  
circuits with power on.  
C
θJC  
must not exceed P . A 50% duty factor was used (Figure 13)  
D
and the conduction losses (P ) are approximated by P = (V  
x I )/2.  
CE  
C
C
CE  
5. Gate Voltage Rating - Never exceed the gate-voltage rat-  
ing of V  
. Exceeding the rated V can result in per-  
GEM  
GE  
E
and E  
OFF  
are defined in the switching waveforms  
is the integral of the instantaneous  
is the inte-  
manent damage to the oxide layer in the gate region.  
ON  
shown in Figure 19. E  
power loss (I  
ON  
CE  
6. Gate Termination - The gates of these devices are es-  
sentially capacitors. Circuits that leave the gate open-cir-  
cuited or floating should be avoided. These conditions  
can result in turn-on of the device due to voltage buildup  
on the input capacitor due to leakage currents or pickup.  
x V ) during turn-on and E  
CE  
OFF  
gral of the instantaneous power loss (I x V ) during turn-  
CE CE  
off. All tail losses are included in the calculation for E  
OFF  
; i.e.  
the collector current equals zero (I  
= 0).  
CE  
7. Gate Protection - These devices do not have an internal  
monolithic zener diode from gate to emitter. If gate pro-  
tection is required an external zener is recommended.  
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.  
3-34  
1...3456

下载PDF

与HGT1S12N60C3相关器件

型号 品牌 描述 获取价格 数据表
HGT1S12N60C3D RENESAS TRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,24A I(C),TO-262AA

获取价格
HGT1S12N60C3DRS9A RENESAS Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB

获取价格
HGT1S12N60C3DS INTERSIL 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

获取价格
HGT1S12N60C3DS FAIRCHILD 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

获取价格
HGT1S12N60C3DS9A ETC TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB

获取价格
HGT1S12N60C3DST ETC TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB

获取价格

与HGT1S12N60C3相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证