Datasheet > HGT1S12N60B3DS9A

HGT1S12N60B3DS9A

更新时间： 2024-02-09 00:42:18

品牌	Logo	应用领域
其他 - ETC		晶体晶体管电动机控制瞄准线双极性晶体管栅
页数	文件大小	规格书
7页	206K
描述
TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 12A I(C) \| TO-263AB

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技术参数
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HGT1S12N60B3DS9A 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	unknown	风险等级：	5.57
Is Samacsys：	N	其他特性：	LOW CONDUCTION LOSS, HYPER FAST RECOVERY
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	27 A
集电极-发射极最大电压：	600 V	配置：	SINGLE WITH BUILT-IN DIODE
JEDEC-95代码：	TO-263AB	JESD-30 代码：	R-PSSO-G2
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	SINGLE
晶体管应用：	MOTOR CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	280 ns	标称接通时间 (ton)：	22 ns
Base Number Matches：	1

HGT1S12N60B3DS9A 数据手册

HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS

Test Circuit and Waveform

HGTP12N60B3D

90%

OFF

10%

L = 1mH

= 25Ω

90%

10%

d(OFF)I

= 480V

d(ON)I

FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT

FIGURE 20. SWITCHING TEST WAVEFORM

Handling Precautions for IGBTs

Operating Frequency Information

Insulated Gate Bipolar Transistors are susceptible to

gate insulation damage by the electrostatic discharge of

energy through the devices. When handling these devices,

care should be exercised to assure that the static charge

built in the handler’s body capacitance is not discharged

through the device. With proper handling and application

procedures, however, IGBTs are currently being extensively

used in production by numerous equipment manufacturers in

military, industrial and consumer applications, with virtually

no damage problems due to electrostatic discharge. IGBTs

can be handled safely if the following basic precautions are

taken:

Operating frequency information for a typical device

(Figure 3) is presented as a guide for estimating device

performance for a specific application. Other typical

frequency vs collector current (I ) plots are possible using

the information shown for a typical unit in Figures 5, 6, 7, 8, 9

and 11. The operating frequency plot (Figure 3) of a typical

device shows f

or f ; whichever is smaller at each

MAX1

MAX2

point. The information is based on measurements of a

typical device and is bounded by the maximum rated

junction temperature.

is defined by f

= 0.05/(t

MAX1

+ t ).

d(OFF)I d(ON)I

MAX1

Deadtime (the denominator) has been arbitrarily held to 10%

of the on-state time for a 50% duty factor. Other definitions

1. Prior to assembly into a circuit, all leads should be kept

shorted together either by the use of metal shorting

springs or by the insertion into conductive material such

as “ECCOSORBD™ LD26” or equivalent.

are possible. t

and t are defined in Figure 20.

d(OFF)I

d(ON)I

Device turn-off delay can establish an additional frequency

limiting condition for an application other than T . t

JM d(OFF)I

2. When devices are removed by hand from their carriers,

the hand being used should be grounded by any suitable

means - for example, with a metallic wristband.

is important when controlling output ripple under a lightly

loaded condition.

is defined by f

MAX2

= (P - P )/(E

OFF

+ E ). The

MAX2

3. Tips of soldering irons should be grounded.

allowable dissipation (P ) is defined by P = (T - T )/R

JM θJC

4. Devices should never be inserted into or removed from

circuits with power on.

The sum of device switching and conduction losses must not

exceed P . A 50% duty factor was used (Figure 3) and the

5. Gate Voltage Rating - Never exceed the gate-voltage

conduction losses (PC) are approximated by

rating of V

. Exceeding the rated V can result in

GEM

= (V

x I )/2.

permanent damage to the oxide layer in the gate region.

6. Gate Termination - The gates of these devices are

essentially capacitors. Circuits that leave the gate open-

circuited or floating should be avoided. These conditions

can result in turn-on of the device due to voltage buildup

on the input capacitor due to leakage currents or pickup.

and E

are defined in the switching waveforms

OFF

shown in Figure 20. E

is the integral of the instantaneous

power loss (I

x V ) during turn-on and E

is the

OFF

x V ) during

integral of the instantaneous power loss (I

turn-off. All tail losses are included in the calculation for

; i.e., the collector current equals zero (I = 0).

7. Gate Protection - These devices do not have an internal

monolithic Zener diode from gate to emitter. If gate

protection is required an external Zener is recommended.

OFF

HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Rev. B

1...4 5 67

中文翻译

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与HGT1S12N60B3DS9A相关器件

型号	品牌	获取价格	描述	数据表
HGT1S12N60B3S	INTERSIL	获取价格	27A, 600V, UFS Series N-Channel IGBTs
HGT1S12N60B3S9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 12A I(C) \| TO-263AB
HGT1S12N60C3	HARRIS	获取价格	24A, 600V, UFS Series N-Channel IGBTs
HGT1S12N60C3D	RENESAS	获取价格	TRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,24A I(C),TO-262AA
HGT1S12N60C3DRS9A	RENESAS	获取价格	Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB
HGT1S12N60C3DS	INTERSIL	获取价格	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGT1S12N60C3DS	FAIRCHILD	获取价格	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGT1S12N60C3DS9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 12A I(C) \| TO-263AB
HGT1S12N60C3DST	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 12A I(C) \| TO-263AB
HGT1S12N60C3R	ROCHESTER	获取价格	24A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-3

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