Datasheet > HGT1S12N60B3S

HGT1S12N60B3S

更新时间： 2024-01-10 03:31:57

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管电动机控制瞄准线双极性晶体管栅
页数	文件大小	规格书
7页	116K
描述
27A, 600V, UFS Series N-Channel IGBTs

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HGT1S12N60B3S 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	not_compliant
风险等级：	5.01	其他特性：	LOW CONDUCTION LOSS
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	27 A
集电极-发射极最大电压：	600 V	配置：	SINGLE
最大降落时间（tf）：	175 ns	门极发射器阈值电压最大值：	6 V
门极-发射极最大电压：	20 V	JEDEC-95代码：	TO-263AB
JESD-30 代码：	R-PSSO-G2	JESD-609代码：	e0
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	104 W
认证状态：	Not Qualified	子类别：	Insulated Gate BIP Transistors
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING	端子位置：	SINGLE
晶体管应用：	MOTOR CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	392 ns	标称接通时间 (ton)：	45 ns
Base Number Matches：	1

HGT1S12N60B3S 数据手册

HGTP12N60B3, HGT1S12N60B3S

Data Sheet

January 2000

File Number 4410.2

27A, 600V, UFS Series N-Channel IGBTs

Features

The HGTP12N60B3 and HGT1S12N60B3S are MOS gated

high voltage switching devices combining the best features

of MOSFETs and bipolar transistors. These devices have

the high input impedance of a MOSFET and the low on-state

conduction loss of a bipolar transistor. The much lower

• 27A, 600V, T = 25 C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Related Literature

on-state voltage drop varies only moderately between 25 C

and 150 C.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC TO-220AB

Formerly developmental type TA49171.

Ordering Information

COLLECTOR

(FLANGE)

PART NUMBER

PACKAGE

TO-220AB

TO-263AB

BRAND

G12N60B3

HGTP12N60B3

HGT1S12N60B3S

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB variant in tape and reel, e.g.,

HGT1S12N60B3S9A.

JEDEC TO-263AB

COLLECTOR

(FLANGE)

Symbol

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

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与HGT1S12N60B3S相关器件

型号	品牌	描述	获取价格	数据表
HGT1S12N60B3S9A	ETC	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 12A I(C) \| TO-263AB	获取价格
HGT1S12N60C3	HARRIS	24A, 600V, UFS Series N-Channel IGBTs	获取价格
HGT1S12N60C3D	RENESAS	TRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,24A I(C),TO-262AA	获取价格
HGT1S12N60C3DRS9A	RENESAS	Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB	获取价格
HGT1S12N60C3DS	INTERSIL	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes	获取价格
HGT1S12N60C3DS	FAIRCHILD	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes	获取价格

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