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HGT1S12N60B3S PDF预览

HGT1S12N60B3S

更新时间: 2024-02-20 01:50:19
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管电动机控制瞄准线双极性晶体管
页数 文件大小 规格书
7页 116K
描述
27A, 600V, UFS Series N-Channel IGBTs

HGT1S12N60B3S 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
风险等级:5.01其他特性:LOW CONDUCTION LOSS
外壳连接:COLLECTOR最大集电极电流 (IC):27 A
集电极-发射极最大电压:600 V配置:SINGLE
最大降落时间(tf):175 ns门极发射器阈值电压最大值:6 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):104 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:SINGLE
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):392 ns标称接通时间 (ton):45 ns
Base Number Matches:1

HGT1S12N60B3S 数据手册

 浏览型号HGT1S12N60B3S的Datasheet PDF文件第1页浏览型号HGT1S12N60B3S的Datasheet PDF文件第2页浏览型号HGT1S12N60B3S的Datasheet PDF文件第3页浏览型号HGT1S12N60B3S的Datasheet PDF文件第4页浏览型号HGT1S12N60B3S的Datasheet PDF文件第5页浏览型号HGT1S12N60B3S的Datasheet PDF文件第7页 
HGTP12N60B3, HGT1S12N60B3S  
Typical Performance Curves Unless Otherwise Specified (Continued)  
2.50  
FREQUENCY = 1MHz  
C
IES  
2.00  
1.50  
1.00  
0.50  
0
C
C
OES  
RES  
0
5
10  
15  
20  
25  
V
, COLLECTOR TO EMITTER VOLTAGE (V)  
CE  
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE  
0
10  
0.5  
0.2  
0.1  
-1  
10  
0.05  
t
0.02  
0.01  
1
P
D
DUTY FACTOR, D = t / t  
1
2
t
SINGLE PULSE  
2
PEAK T = P x Z  
θJC  
x R + T  
θJC C  
J
D
-2  
10  
-5  
10  
-4  
-3  
-2  
-1  
0
1
10  
10  
10  
10  
10  
10  
t , RECTANGULAR PULSE DURATION (s)  
1
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE  
Test Circuit and Waveforms  
HGTP12N60B3D  
90%  
OFF  
10%  
ON2  
V
GE  
E
E
L = 1mH  
V
CE  
R
= 25Ω  
G
90%  
10%  
d(OFF)I  
+
I
CE  
t
t
V
= 480V  
rI  
DD  
t
fI  
-
t
d(ON)I  
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT  
FIGURE 18. SWITCHING TEST WAVEFORMS  
6

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