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HGT1S12N60A4S9A PDF预览

HGT1S12N60A4S9A

更新时间: 2024-01-15 02:23:05
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关双极性晶体管
页数 文件大小 规格书
8页 225K
描述
600V, SMPS Series N-Channel IGBTs

HGT1S12N60A4S9A 数据手册

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HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A  
Typical Performance Curves Unless Otherwise Specified (Continued)  
115  
110  
105  
100  
95  
90  
80  
70  
60  
50  
40  
30  
20  
10  
R
= 10, L = 500µH, V  
= 390V  
CE  
R
= 10, L = 500µH,  
G
V
= 390V  
G
CE  
o
o
V
= 12V, V  
GE  
= 15V, T = 125 C  
J
GE  
T
= 125 C, V  
= 12V OR 15V  
J
GE  
o
V
= 12V, V  
GE  
= 15V, T = 25 C  
GE  
J
o
= 25 C, V  
T
= 12V OR 15V  
GE  
J
90  
85  
2
4
6
8
10  
12  
14  
16 18 20 22  
24  
2
4
6
8
10  
12 14  
16  
18 20  
22  
24  
I
, COLLECTOR TO EMITTER CURRENT (A)  
I
CE  
, COLLECTOR TO EMITTER CURRENT (A)  
CE  
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO  
EMITTER CURRENT  
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER  
CURRENT  
250  
16  
o
I
= 1mA, R = 25, T = 25 C  
DUTY CYCLE < 0.5%, V  
= 10V  
PULSE DURATION = 250µs  
G(REF)  
L
C
CE  
14  
12  
10  
8
o
T
o
= 25 C  
J
200  
150  
100  
V
= 600V  
CE  
V
= 400V  
CE  
T
= -55 C  
J
o
T
= 125 C  
J
V
CE  
= 200V  
6
4
50  
0
2
0
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
0
10  
20  
30  
40  
50  
60  
70  
80  
V
, GATE TO EMITTER VOLTAGE (V)  
Q , GATE CHARGE (nC)  
GE  
G
FIGURE 13. TRANSFER CHARACTERISTIC  
FIGURE 14. GATE CHARGE WAVEFORMS  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
R
= 10, L = 500µH, V  
= 390V, V = 15V  
GE  
10  
G
CE  
+ E  
ON2 OFF  
o
T
= 125 C, L = 500µH, V  
= 390V, V = 15V  
GE  
J
CE  
E
= E  
TOTAL  
E
= E  
+ E  
ON2 OFF  
TOTAL  
I
= 24A  
CE  
I
= 24A  
CE  
1
I
I
= 12A  
= 6A  
CE  
I
= 12A  
= 6A  
CE  
CE  
I
CE  
0.1  
25  
50  
75  
100  
125  
150  
5
10  
100  
, GATE RESISTANCE ()  
1000  
o
T
, CASE TEMPERATURE ( C)  
C
R
G
FIGURE 15. TOTAL SWITCHING LOSS vs CASE  
TEMPERATURE  
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE  
©2003 Fairchild Semiconductor Corporation  
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2  

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