5秒后页面跳转
捷配首页

Datasheet > HGT1S12N60B3DS
HGT1S12N60B3DS PDF预览

HGT1S12N60B3DS

更新时间： 2024-01-15 12:04:12
品牌 Logo 应用领域
英特矽尔 - INTERSIL 二极管双极性晶体管
页数 文件大小 规格书
7页 120K
描述
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode

阅读下载

中文翻译

获取价格

HGT1S12N60B3DS 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
风险等级：5.01其他特性：LOW CONDUCTION LOSS
外壳连接：COLLECTOR最大集电极电流 (IC)：27 A
集电极-发射极最大电压：600 V配置：SINGLE
最大降落时间（tf）：175 ns门极发射器阈值电压最大值：6 V
门极-发射极最大电压：20 VJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e0
元件数量：1端子数量：2
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：104 W
认证状态：Not Qualified子类别：Insulated Gate BIP Transistors
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：SINGLE
晶体管应用：MOTOR CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：392 ns标称接通时间 (ton)：45 ns
Base Number Matches：1

HGT1S12N60B3DS 数据手册

 浏览型号HGT1S12N60B3DS的Datasheet PDF文件第2页浏览型号HGT1S12N60B3DS的Datasheet PDF文件第3页浏览型号HGT1S12N60B3DS的Datasheet PDF文件第4页浏览型号HGT1S12N60B3DS的Datasheet PDF文件第5页浏览型号HGT1S12N60B3DS的Datasheet PDF文件第6页浏览型号HGT1S12N60B3DS的Datasheet PDF文件第7页 
HGTG12N60B3D, HGTP12N60B3D,  
HGT1S12N60B3DS  
Data Sheet  
January 2000  
File Number 4411.2  
27A, 600V, UFS Series N-Channel IGBTs  
with Anti-Parallel Hyperfast Diode  
Features  
o
• 27A, 600V, T = 25 C  
C
This family of MOS gated high voltage switching devices  
combine the best features of MOSFETs and bipolar  
• 600V Switching SOA Capability  
o
• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at T = 150 C  
J
transistors. These devices have the high input impedance of  
a MOSFET and the low on-state conduction loss of a bipolar  
transistor. The much lower on-state voltage drop varies only  
• Short Circuit Rating  
• Low Conduction Loss  
• Hyperfast Anti-Parallel Diode  
• Related Literature  
o
o
moderately between 25 C and 150 C. The IGBT used is the  
development type TA49171. The diode used in anti-parallel  
with the IGBT is the development type TA49188.  
The IGBT is ideal for many high voltage switching  
applications operating at moderate frequencies where low  
conduction losses are essential, such as: AC and DC motor  
controls, power supplies and drivers for solenoids, relays  
and contactors.  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards  
Packaging  
JEDEC TO-220AB (ALTERNATE VERSION)  
Formerly developmental type TA49173.  
E
C
G
COLLECTOR  
(FLANGE)  
Ordering Information  
PART NUMBER  
HGTP12N60B3D  
HGTG12N60B3D  
HGT1S12N60B3DS  
PACKAGE  
BRAND  
12N60B3D  
TO-220AB  
TO-247  
12N60B3D  
12N60B3D  
JEDEC TO-263AB  
TO-263AB  
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-263AB variant in tape and reel, e.g.  
HGT1S12N60B3DS9A.  
COLLECTOR  
(FLANGE)  
G
E
Symbol  
C
JEDEC STYLE TO-247  
E
C
G
G
E
COLLECTOR  
(BOTTOM SIDE METAL)  
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000  
1
1234567

中文翻译

下载PDF

与HGT1S12N60B3DS相关器件

型号 品牌 获取价格 描述 数据表
HGT1S12N60B3DS9A ETC

获取价格

 		TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
HGT1S12N60B3S INTERSIL

获取价格

 		27A, 600V, UFS Series N-Channel IGBTs
HGT1S12N60B3S9A ETC

获取价格

 		TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
HGT1S12N60C3 HARRIS

获取价格

 		24A, 600V, UFS Series N-Channel IGBTs
HGT1S12N60C3D RENESAS

获取价格

 		TRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,24A I(C),TO-262AA
HGT1S12N60C3DRS9A RENESAS

获取价格

 		Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB
HGT1S12N60C3DS INTERSIL

获取价格

 		24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGT1S12N60C3DS FAIRCHILD

获取价格

 		24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGT1S12N60C3DS9A ETC

获取价格

 		TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
HGT1S12N60C3DST ETC

获取价格

 		TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB

与HGT1S12N60B3DS相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证