Datasheet > HGT1S12N60A4S9A

HGT1S12N60A4S9A

更新时间： 2024-01-26 02:03:04

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关双极性晶体管
页数	文件大小	规格书
8页	225K
描述
600V, SMPS Series N-Channel IGBTs

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HGT1S12N60A4S9A 数据手册

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A

Handling Precautions for IGBTs

Operating Frequency Information

Insulated Gate Bipolar Transistors are susceptible to

gate-insulation damage by the electrostatic discharge of

energy through the devices. When handling these devices,

care should be exercised to assure that the static charge

built in the handler’s body capacitance is not discharged

through the device. With proper handling and application

procedures, however, IGBTs are currently being extensively

used in production by numerous equipment manufacturers in

military, industrial and consumer applications, with virtually

no damage problems due to electrostatic discharge. IGBTs

can be handled safely if the following basic precautions are

taken:

Operating frequency information for a typical device

(Figure 3) is presented as a guide for estimating device

performance for a specific application. Other typical

frequency vs collector current (I ) plots are possible using

the information shown for a typical unit in Figures 5, 6, 7, 8, 9

and 11. The operating frequency plot (Figure 3) of a typical

device shows f

or f

; whichever is smaller at each

MAX1

MAX2

point. The information is based on measurements of a

typical device and is bounded by the maximum rated

junction temperature.

is defined by f

= 0.05/(t ).

+ t

MAX1

d(OFF)I d(ON)I

Deadtime (the denominator) has been arbitrarily held to 10%

1. Prior to assembly into a circuit, all leads should be kept

shorted together either by the use of metal shorting

springs or by the insertion into conductive material such

as “ECCOSORBD™ LD26” or equivalent.

of the on-state time for a 50% duty factor. Other definitions

are possible. t

d(OFF)I

and t are defined in Figure 21.

d(ON)I

Device turn-off delay can establish an additional frequency

limiting condition for an application other than T

+ E

2. When devices are removed by hand from their carriers,

the hand being used should be grounded by any suitable

means - for example, with a metallic wristband.

is defined by f

MAX2

= (P - P )/(E

OFF

). The

ON2

MAX2

allowable dissipation (P ) is defined by P = (T - T )/R

JM θJC

The sum of device switching and conduction losses must not

3. Tips of soldering irons should be grounded.

exceed P . A 50% duty factor was used (Figure 3) and the

4. Devices should never be inserted into or removed from

circuits with power on.

conduction losses (P ) are approximated by

= (V x I )/2.

CE CE

5. Gate Voltage Rating - Never exceed the gate-voltage

and E

OFF

are defined in the switching waveforms

rating of V

. Exceeding the rated V can result in

ON2

GEM

permanent damage to the oxide layer in the gate region.

shown in Figure 21. E

is the integral of the

ON2

instantaneous power loss (I

x V ) during turn-on and

6. Gate Termination - The gates of these devices are

essentially capacitors. Circuits that leave the gate open-

circuited or floating should be avoided. These conditions

can result in turn-on of the device due to voltage buildup

on the input capacitor due to leakage currents or pickup.

is the integral of the instantaneous power loss

OFF

x V ) during turn-off. All tail losses are included in the

calculation for E

; i.e., the collector current equals zero

OFF

= 0).

7. Gate Protection - These devices do not have an internal

monolithic Zener diode from gate to emitter. If gate

protection is required an external Zener is recommended.

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2

1...4 5 678

中文翻译

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与HGT1S12N60A4S9A相关器件

型号	品牌	获取价格	描述	数据表
HGT1S12N60B3DS	FAIRCHILD	获取价格	27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGT1S12N60B3DS	INTERSIL	获取价格	27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGT1S12N60B3DS9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 12A I(C) \| TO-263AB
HGT1S12N60B3S	INTERSIL	获取价格	27A, 600V, UFS Series N-Channel IGBTs
HGT1S12N60B3S9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 12A I(C) \| TO-263AB
HGT1S12N60C3	HARRIS	获取价格	24A, 600V, UFS Series N-Channel IGBTs
HGT1S12N60C3D	RENESAS	获取价格	TRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,24A I(C),TO-262AA
HGT1S12N60C3DRS9A	RENESAS	获取价格	Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB
HGT1S12N60C3DS	INTERSIL	获取价格	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGT1S12N60C3DS	FAIRCHILD	获取价格	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

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