Datasheet > HGT1S11N120CNS

HGT1S11N120CNS

更新时间： 2024-11-05 22:20:43

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管电动机控制瞄准线双极性晶体管
页数	文件大小	规格书
7页	85K
描述
43A, 1200V, NPT Series N-Channel IGBT

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HGT1S11N120CNS 数据手册

HGTG11N120CN, HGTP11N120CN,

HGT1S11N120CNS

Data Sheet

January 2000

File Number 4577.2

43A, 1200V, NPT Series N-Channel IGBT

Features

The HGTG11N120CN, HGTP11N120CN, and

• 43A, 1200V, T = 25 C

HGT1S11N120CNS are Non-Punch Through (NPT) IGBT

designs. They are new members of the MOS gated high

voltage switching IGBT family. IGBTs combine the best

features of MOSFETs and bipolar transistors. This device

has the high input impedance of a MOSFET and the low on-

state conduction loss of a bipolar transistor.

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Avalanche Rated

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

• Thermal Impedance SPICE Model

Temperature Compensating SABER™ Model

www.intersil.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly Developmental Type TA49291.

Ordering Information

Packaging

PART NUMBER

HGTG11N120CN

HGTP11N120CN

HGT1S11N120CNS

PACKAGE

BRAND

G11N120CN

JEDEC STYLE TO-247

TO-247

COLLECTOR

(BOTTOM SIDE

METAL)

TO-220AB

TO-263AB

11N120CN

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB variant in Tape and Reel, i.e.,

HGT1S11N120CNS9A.

Symbol

JEDEC TO-220AB (ALTERNATE VERSION)

COLLECTOR

(FLANGE)

JEDEC TO-263AB

COLLECTOR

(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

SABER™ is a trademark of Analogy, Inc.

12 3 4 5 6 7

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与HGT1S11N120CNS相关器件

型号	品牌	获取价格	描述	数据表
HGT1S11N120CNS9A	FAIRCHILD	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| 22A I(C) \| TO-263AB
HGT1S12N60A4DS	ROCHESTER	获取价格	54A, 600V, N-CHANNEL IGBT, TO-263AB
HGT1S12N60A4DS	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S12N60A4DS	ONSEMI	获取价格	600V，SMPS IGBT
HGT1S12N60A4DS	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S12N60A4DS_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE
HGT1S12N60A4DS9A	INTERSIL	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 54A I(C) \| TO-263AB
HGT1S12N60A4DST	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB
HGT1S12N60A4S	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT
HGT1S12N60A4S9A	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBTs

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