Datasheet > HGT1S12N60A4DS

HGT1S12N60A4DS

更新时间： 2024-11-05 22:20:43

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体二极管开关晶体管电动机控制瞄准线双极性晶体管栅
页数	文件大小	规格书
8页	392K
描述
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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HGT1S12N60A4DS 数据手册

HGTG12N60A4D, HGTP12N60A4D,

HGT1S12N60A4DS

Data Sheet

November 1999

File Number 4697.3

600V, SMPS Series N-Channel IGBT with

Anti-Parallel Hyperfast Diode

Features

• >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A

• 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A

The HGTG12N60A4D, HGTP12N60A4D and

HGT1S12N60A4DS are MOS gated high voltage switching

devices combining the best features of MOSFETs and

bipolar transistors. These devices have the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state voltage

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T = 125 C

• Low Conduction Loss

drop varies only moderately between 25 C and 150 C. The

IGBT used is the development type TA49335. The diode

used in anti-parallel is the development type TA49371.

• Temperature Compensating SABER™ Model

www.intersil.com

• Related Literature

This IGBT is ideal for many high voltage switching

applications operating at high frequencies where low

conduction losses are essential. This device has been

optimized for high frequency switch mode power supplies.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards

Packaging

JEDEC TO-220AB ALTERNATE VERSION

Formerly Developmental Type TA49337.

Ordering Information

COLLECTOR

(FLANGE)

PART NUMBER

HGTG12N60A4D

HGTP12N60A4D

HGT1S12N60A4DS

PACKAGE

BRAND

12N60A4D

TO-247

TO-220AB

TO-263AB

12N60A4D

JEDEC TO-263AB

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB variant in tape and reel, e.g.

HGT1S12N60A4DS9A.

COLLECTOR

(FLANGE)

Symbol

JEDEC STYLE TO-247

COLLECTOR

(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

SABER™ is a trademark of Analogy, Inc.

2-1

12 3 4 5 6 7 8

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HGT1S12N60A4DS 替代型号

型号	品牌	替代类型	描述	数据表
IRG4PC50WPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC50UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与HGT1S12N60A4DS相关器件

型号	品牌	获取价格	描述	数据表
HGT1S12N60A4DS_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE
HGT1S12N60A4DS9A	INTERSIL	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 54A I(C) \| TO-263AB
HGT1S12N60A4DST	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB
HGT1S12N60A4S	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT
HGT1S12N60A4S9A	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBTs
HGT1S12N60B3DS	FAIRCHILD	获取价格	27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGT1S12N60B3DS	INTERSIL	获取价格	27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGT1S12N60B3DS9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 12A I(C) \| TO-263AB
HGT1S12N60B3S	INTERSIL	获取价格	27A, 600V, UFS Series N-Channel IGBTs
HGT1S12N60B3S9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 12A I(C) \| TO-263AB

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