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HGT1S11N120CNS9A PDF预览

HGT1S11N120CNS9A

更新时间： 2024-11-05 23:55:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管双极性晶体管
页数 文件大小 规格书
7页 138K
描述
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 22A I(C) | TO-263AB

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HGT1S11N120CNS9A 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：D2PAK包装说明：SMALL OUTLINE, R-PSSO-G2
针数：4Reach Compliance Code：compliant
风险等级：5.21其他特性：AVALANCHE RATED
外壳连接：COLLECTOR最大集电极电流 (IC)：43 A
集电极-发射极最大电压：1200 V配置：SINGLE
最大降落时间（tf）：400 ns门极-发射极最大电压：20 V
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e0元件数量：1
端子数量：2最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：298 W
认证状态：Not Qualified最大上升时间（tr）：16 ns
子类别：Insulated Gate BIP Transistors表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：MOTOR CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：550 ns标称接通时间 (ton)：33 ns
Base Number Matches：1

HGT1S11N120CNS9A 数据手册

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HGTG11N120CN, HGTP11N120CN,  
HGT1S11N120CNS  
Data Sheet  
December 2001  
43A, 1200V, NPT Series N-Channel IGBT  
Features  
o
The HGTG11N120CN, HGTP11N120CN, and  
• 43A, 1200V, T = 25 C  
C
HGT1S11N120CNS are Non-Punch Through (NPT) IGBT  
designs. They are new members of the MOS gated high  
voltage switching IGBT family. IGBTs combine the best  
features of MOSFETs and bipolar transistors. This device  
has the high input impedance of a MOSFET and the low on-  
state conduction loss of a bipolar transistor.  
• 1200V Switching SOA Capability  
o
• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at T = 150 C  
J
• Short Circuit Rating  
• Low Conduction Loss  
• Avalanche Rated  
The IGBT is ideal for many high voltage switching  
applications operating at moderate frequencies where low  
conduction losses are essential, such as: AC and DC motor  
controls, power supplies and drivers for solenoids, relays  
and contactors.  
• Thermal Impedance SPICE Model  
Temperature Compensating SABER™ Model  
www.fairchildsemi.com  
• Related Literature  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Formerly Developmental Type TA49291.  
Ordering Information  
Packaging  
PART NUMBER  
HGTG11N120CN  
HGTP11N120CN  
HGT1S11N120CNS  
PACKAGE  
BRAND  
G11N120CN  
JEDEC STYLE TO-247  
E
C
TO-247  
COLLECTOR  
(BOTTOM SIDE  
METAL)  
G
TO-220AB  
TO-263AB  
11N120CN  
11N120CN  
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-263AB variant in Tape and Reel, i.e.,  
HGT1S11N120CNS9A.  
Symbol  
JEDEC TO-220AB (ALTERNATE VERSION)  
C
COLLECTOR  
(FLANGE)  
E
G
C
G
E
JEDEC TO-263AB  
COLLECTOR  
(FLANGE)  
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
©2001 Fairchild Semiconductor Corporation  
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B  
1234567

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