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HGT1S12N60A4DS PDF预览

HGT1S12N60A4DS

更新时间： 2024-11-05 22:20:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体二极管开关晶体管电动机控制瞄准线双极性晶体管栅
页数 文件大小 规格书
8页 173K
描述
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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中文翻译

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HGT1S12N60A4DS 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：D2PAK
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.13其他特性：LOW CONDUCTION LOSS
外壳连接：COLLECTOR最大集电极电流 (IC)：54 A
集电极-发射极最大电压：600 V配置：SINGLE WITH BUILT-IN DIODE
最大降落时间（tf）：95 ns门极-发射极最大电压：20 V
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：167 W认证状态：Not Qualified
子类别：Insulated Gate BIP Transistors表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：POWER CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：180 ns标称接通时间 (ton)：33 ns
Base Number Matches：1

HGT1S12N60A4DS 数据手册

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HGTG12N60A4D, HGTP12N60A4D,  
HGT1S12N60A4DS  
Data Sheet  
December 2001  
600V, SMPS Series N-Channel IGBT with  
Anti-Parallel Hyperfast Diode  
Features  
• >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A  
• 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A  
The HGTG12N60A4D, HGTP12N60A4D and  
HGT1S12N60A4DS are MOS gated high voltage switching  
devices combining the best features of MOSFETs and  
bipolar transistors. These devices have the high input  
impedance of a MOSFET and the low on-state conduction  
loss of a bipolar transistor. The much lower on-state voltage  
• 600V Switching SOA Capability  
o
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T = 125 C  
J
• Low Conduction Loss  
o
o
drop varies only moderately between 25 C and 150 C. The  
IGBT used is the development type TA49335. The diode  
used in anti-parallel is the development type TA49371.  
• Temperature Compensating SABER™ Model  
www.fairchildsermi.com  
• Related Literature  
This IGBT is ideal for many high voltage switching  
applications operating at high frequencies where low  
conduction losses are essential. This device has been  
optimized for high frequency switch mode power supplies.  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards  
Packaging  
JEDEC TO-220AB ALTERNATE VERSION  
Formerly Developmental Type TA49337.  
COLLECTOR  
(FLANGE)  
Ordering Information  
PART NUMBER  
HGTG12N60A4D  
HGTP12N60A4D  
HGT1S12N60A4DS  
PACKAGE  
BRAND  
12N60A4D  
E
C
G
TO-247  
TO-220AB  
TO-263AB  
12N60A4D  
12N60A4D  
JEDEC TO-263AB  
COLLECTOR  
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-263AB variant in tape and reel, e.g.  
HGT1S12N60A4DS9A.  
(FLANGE)  
G
Symbol  
E
C
JEDEC STYLE TO-247  
E
G
C
G
E
COLLECTOR  
(FLANGE)  
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
©2001 Fairchild Semiconductor Corporation  
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B  
12345678

中文翻译

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HGT1S12N60A4DS 替代型号

型号 品牌 替代类型 描述 数据表
IRG4PC50WPBF INFINEON

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IRG4PC50UDPBF INFINEON

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与HGT1S12N60A4DS相关器件

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HGT1S12N60A4DS_NL FAIRCHILD

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 		Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE
HGT1S12N60A4DS9A INTERSIL

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 		TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-263AB
HGT1S12N60A4DST FAIRCHILD

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 		Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB
HGT1S12N60A4S INTERSIL

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 		600V, SMPS Series N-Channel IGBT
HGT1S12N60A4S9A FAIRCHILD

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 		600V, SMPS Series N-Channel IGBTs
HGT1S12N60B3DS FAIRCHILD

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 		27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGT1S12N60B3DS INTERSIL

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 		27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGT1S12N60B3DS9A ETC

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 		TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
HGT1S12N60B3S INTERSIL

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 		27A, 600V, UFS Series N-Channel IGBTs
HGT1S12N60B3S9A ETC

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 		TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB

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