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HGT1S10N120CNS PDF预览

HGT1S10N120CNS

更新时间: 2024-09-17 07:18:07
品牌 Logo 应用领域
瑞萨 - RENESAS
页数 文件大小 规格书
2页 341K
描述
Insulated Gate Bipolar Transistor, 10A I(C), 1200V V(BR)CES, N-Channel, TO-263AB

HGT1S10N120CNS 数据手册

 浏览型号HGT1S10N120CNS的Datasheet PDF文件第2页 

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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-263AB