Datasheet > 晶体管 > IGBT> HGT1N40N60A4

HGT1N40N60A4

更新时间： 2024-11-04 22:20:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		二极管开关双极性晶体管
页数	文件大小	规格书
10页	153K
描述
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HGT1N40N60A4 数据手册

HGT1N40N60A4D

Data Sheet

December 2001

600V, SMPS Series N-Channel IGBT with

Anti-Parallel Hyperfast Diode

Features

• 100kHz Operation At 390V, 22A

The HGT1N40N60A4D is a MOS gated high voltage

switching device combining the best features of a MOSFET

and a bipolar transistor. These devices have the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state voltage

drop varies only moderately between 25 C and 150 C. This

IGBT is ideal for many high voltage switching applications

operating at high frequencies where low conduction losses

are essential. This device has been optimized for high

frequency switch mode power supplies.

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at T = 125 C

• Low Conduction Loss

Symbol

Formerly Developmental Type TA49349.

Ordering Information

PART NUMBER

PACKAGE

BRAND

40N60A4D

HGT1N40N60A4D

SOT-227

Packaging

NOTE: When ordering, use the entire part number.

JEDEC STYLE SOT-227B

GATE

EMITTER

TAB

(ISOLATED)

COLLECTOR

EMITTER

Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGT1N40N60A4D Rev. B

12 3 4 5 6 7...10

中文翻译

下载PDF

与HGT1N40N60A4相关器件

型号	品牌	获取价格	描述	数据表
HGT1N40N60A4D	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S10N120BNS	INTERSIL	获取价格	35A, 1200V, NPT Series N-Channel IGBT
HGT1S10N120BNS	FAIRCHILD	获取价格	35A, 1200V, NPT Series N-Channel IGBT
HGT1S10N120BNS	ONSEMI	获取价格	IGBT，1200V，NPT
HGT1S10N120BNS9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| 17A I(C) \| TO-263AB
HGT1S10N120BNST	FAIRCHILD	获取价格	35A, 1200V, NPT Series N-Channel IGBT
HGT1S10N120BNST	ONSEMI	获取价格	IGBT，1200V，NPT
HGT1S10N120CNS	RENESAS	获取价格	Insulated Gate Bipolar Transistor, 10A I(C), 1200V V(BR)CES, N-Channel, TO-263AB
HGT1S11N120CNS	FAIRCHILD	获取价格	43A, 1200V, NPT Series N-Channel IGBT
HGT1S11N120CNS	INTERSIL	获取价格	43A, 1200V, NPT Series N-Channel IGBT