Datasheet > FGA60N65SMMW

FGA60N65SMMW

更新时间： 2024-11-08 19:50:47

品牌	Logo	应用领域
MICROSS		栅
页数	文件大小	规格书
4页	453K
描述
Insulated Gate Bipolar Transistor,

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数据手册

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FGA60N65SMMW 数据手册

Field Stop IGBT Chip

FGA60N65SM

650V, 60A, V_CE(sat)= 1.9V

Part

V_CES

I_Cn

V_{CE (sat) Typ}

1.9

Die Size

6.3 x 5.7 mm²

FGA60N65SM

650V

60A

See page 2 for ordering part numbers & supply formats

Features

Applications



Low Saturation Voltage



Inverter Modules

Fast Switching: E_OFF= 7.5µJ/A

Welding & Drive Applications

Tightened Parameter Distribution

Maximum Ratings

Symbol

V_CES

Parameter

Ratings

650

Units

Collector to Emitter Voltage

Gate to Emitter Voltage

V_GES

±20

I_C

Collector Current¹

Continuous (T_C= 25°C)

Continuous (T_C= 100°C)

Pulsed Collector Current

Operation Junction & Storage Temperature

120

I_CM

180

T_J, T_STG

-55 to 175

°C

Static Characteristics, T_J= 25° unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

BV_CES

I_CES

Collector to Emitter Breakdown Voltage

Collector Cut-Off Current

V_GE= 0V, I_C= 250µA

V_CE= V_CES, V_GE= 0V

V_GE= V_GES, V_CE= 0V

650

250

±400

µA

I_GES

G-E Leakage Current

On Characteristics, T_J= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

V_GE(th)

G-E Threshold Voltage

I_C= 250µA, V_CE= V_GE

I_C= 60A, V_GE= 15V

3.5

4.5

1.9

2.1

6.0

2.5

V_CE(sat)

Collector to Emitter Saturation Voltage

I_C= 60A, V_GE= 15V

T_C= 175°C

Further Information - Contact your Micross sales office or email your enquiry to baredie@micross.com

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