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FDMS86255 PDF预览

FDMS86255

更新时间: 2024-11-14 11:14:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 423K
描述
N 沟道屏蔽门极 PowerTrench® MOSFET 150 V,45A,12.4mΩ

FDMS86255 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET – N-Channel,  
Shielded Gate,  
POWERTRENCH®  
150ꢀV, 62ꢀA, 12.4ꢀmW  
Pin 1  
S
S
S
G
Pin 1  
D
D
D
D
Top  
Bottom  
FDMS86255  
PQFN8 5X6, 1.27P  
CASE 483AG  
Description  
This NChannel MOSFET is produced using onsemi advanced  
POWERTRENCH process that incorporates Shielded Gate  
technology. This process has been optimized for the onstate  
resistance and yet maintain superior switching performance.  
D
D
D
S
S
S
Features  
Shielded Gate MOSFET Technology  
D
G
Max R  
Max R  
= 12.4 mW at V = 10 V, I = 10 A  
GS D  
DS(on)  
= 15.5 mW at V = 6 V, I = 8 A  
DS(on)  
GS  
D
Advanced Package and Silicon Combination for Low R  
and  
MARKING DIAGRAM  
DS(on)  
High Efficiency  
Next Generation Enhanced Body Diode Technology, Engineered for  
Soft Recovery  
$Y&Z&3&K  
MSL1 Robust Package Design  
100% UIL Tested  
RoHS Compliant  
$Y  
= Logo  
= Assembly Location  
= Date Code (Year and Week)  
= Specific Device Code  
These Device is Halogen Free  
&Z  
&3  
&K  
Applications  
OringFET / Load Switching  
Synchronous Rectification  
DCDC Conversion  
ORDERING INFORMATION  
See detailed ordering and shipping information on  
page 6 of this data sheet.  
Publication Order Number:  
© Semiconductor Components Industries, LLC, 2002  
1
FDMS86255/D  
September, 2022 Rev. 1  

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