Datasheet > FDMS86255

FDMS86255

更新时间： 2024-09-26 11:14:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	423K
描述
N 沟道屏蔽门极 PowerTrench® MOSFET 150 V，45A，12.4mΩ

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FDMS86255 数据手册

DATA SHEET

www.onsemi.com

MOSFET – N-Channel,

Shielded Gate,

POWERTRENCH^®

150ꢀV, 62ꢀA, 12.4ꢀmW

Pin 1

Top

Bottom

FDMS86255

PQFN8 5X6, 1.27P

CASE 483AG

Description

This N−Channel MOSFET is produced using onsemi advanced

POWERTRENCH process that incorporates Shielded Gate

technology. This process has been optimized for the on−state

resistance and yet maintain superior switching performance.

Features

• Shielded Gate MOSFET Technology

• Max R

= 12.4 mW at V = 10 V, I = 10 A

GS D

DS(on)

= 15.5 mW at V = 6 V, I = 8 A

DS(on)

• Advanced Package and Silicon Combination for Low R

and

MARKING DIAGRAM

DS(on)

High Efficiency

• Next Generation Enhanced Body Diode Technology, Engineered for

Soft Recovery

$Y&Z&3&K

• MSL1 Robust Package Design

• 100% UIL Tested

• RoHS Compliant

= Logo

= Assembly Location

= Date Code (Year and Week)

= Specific Device Code

• These Device is Halogen Free

Applications

• OringFET / Load Switching

• Synchronous Rectification

• DC−DC Conversion

ORDERING INFORMATION

See detailed ordering and shipping information on

page 6 of this data sheet.

Publication Order Number:

FDMS86255/D

September, 2022 − Rev. 1

12 3 4 5 6 7 8

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