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FDMS86500L PDF预览

FDMS86500L

更新时间: 2024-11-14 11:14:35
品牌 Logo 应用领域
安森美 - ONSEMI PC开关脉冲光电二极管晶体管
页数 文件大小 规格书
7页 525K
描述
N 沟道,Power Trench® MOSFET,60V,158A,2.5mΩ

FDMS86500L 技术参数

是否无铅:不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F5Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:26 weeks风险等级:0.92
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:1067439Samacsys Pin Count:12
Samacsys Part Category:MOSFET (N-Channel)Samacsys Package Category:Other
Samacsys Footprint Name:PQFN8 5X6, 1.27P CASE 483AE ISSUE A FFW_2020Samacsys Released Date:2019-06-18 10:03:42
Is Samacsys:N雪崩能效等级(Eas):240 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):80 A
最大漏极电流 (ID):25 A最大漏源导通电阻:0.0025 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MO-240AA
JESD-30 代码:R-PDSO-F5JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):104 W最大脉冲漏极电流 (IDM):180 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDMS86500L 数据手册

 浏览型号FDMS86500L的Datasheet PDF文件第2页浏览型号FDMS86500L的Datasheet PDF文件第3页浏览型号FDMS86500L的Datasheet PDF文件第4页浏览型号FDMS86500L的Datasheet PDF文件第5页浏览型号FDMS86500L的Datasheet PDF文件第6页浏览型号FDMS86500L的Datasheet PDF文件第7页 
FDMS86500L  
MOSFET, N‐Channel,  
POWERTRENCH)  
60 V, 158 A, 2.5 mW  
General Description  
www.onsemi.com  
This NChannel MOSFET has been designed specifically  
to improve the overall efficiency and to minimize switch node ringing  
of DC/DC converters using either synchronous or synchronous or  
conventional switching PWM controllers. It has been optimized for  
S
D
D
D
low gate charge, low r  
reverse recovery performance.  
, fast switching speed and body diode  
DS(on)  
S
S
G
Features  
Max r  
Max r  
= 2.5 mW at V = 10 V, I = 25 A  
GS D  
= 3.7 mW at V = 4.5 V, I = 20 A  
D
DS(on)  
DS(on)  
GS  
D
Advanced Package and Silicon combination for low r  
and high  
N-Channel MOSFET  
DS(on)  
efficiency  
Next generation enhanced body diode technology, engineered for soft  
Top  
Bottom  
S
Pin 1  
recovery  
S
MSL1 robust package design  
100% UIL tested  
RoHS Compliant  
S
G
D
D
D
D
Applications  
Power 56  
(PQFN8)  
CASE 483AE  
Primary Switch in Isolated DCDC  
Synchronous Rectifier  
Load Switch  
MARKING DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
S
S
D
D
Symbol  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current:  
Ratings  
60  
Unit  
V
$Y&Z&3&K  
FDMS  
86500L  
V
DS  
V
GS  
S
D
D
20  
V
G
I
D
A
Continuous T = 25°C (Note 5)  
158  
100  
25  
C
Continuous T = 100°C (Note 5)  
$Y  
&Z  
&3  
&K  
= ON Semiconductor Logo  
= Assembly Plant Code  
= Data Code (Year & Week)  
= Lot  
C
Continuous T = 25°C (Note 1a)  
A
Pulsed (Note 4)  
799  
E
Single Pulse Avalanche Energy (Note 3)  
Power Dissipation:  
240  
mJ  
W
AS  
FDMS86500L  
= Specific Device Code  
P
D
T
= 25°C  
104  
2.5  
C
T = 25°C (Note 1a)  
A
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
T , T  
Operating and Storage Junction Tempera-  
ture Range  
55 to  
+150  
°C  
J
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
November, 2018 Rev. 2  
FDMS86500L/D  

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