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FDMS86520L PDF预览

FDMS86520L

更新时间： 2024-11-14 11:13:35
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 387K
描述
N 沟道，PowerTrench® MOSFET，60V，22A，8.2mΩ

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中文翻译

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FDMS86520L 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F5Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：26 weeks风险等级：5.31
Is Samacsys：N雪崩能效等级（Eas）：91 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (Abs) (ID)：22 A
最大漏极电流 (ID)：13.5 A最大漏源导通电阻：0.0082 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：MO-240AA
JESD-30 代码：R-PDSO-F5JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：5工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：69 W最大脉冲漏极电流 (IDM)：60 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDMS86520L 数据手册

 浏览型号FDMS86520L的Datasheet PDF文件第2页浏览型号FDMS86520L的Datasheet PDF文件第3页浏览型号FDMS86520L的Datasheet PDF文件第4页浏览型号FDMS86520L的Datasheet PDF文件第5页浏览型号FDMS86520L的Datasheet PDF文件第6页浏览型号FDMS86520L的Datasheet PDF文件第7页 
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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
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device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated  
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please  
email any questions regarding the system integration to Fairchild_questions@onsemi.com.  
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number  
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