Datasheet > FDMS86368-F085

FDMS86368-F085

更新时间： 2024-09-26 11:14:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	413K
描述
N 沟道 PowerTrench® MOSFET 80V，80 A，4.5mΩ

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDMS86368-F085 数据手册

DATA SHEET

www.onsemi.com

MOSFET – N-Channel,

POWERTRENCH⁾

MAX

I MAX

DSS

DS(ON)

80 V

4.5 mW @ 10 V

80 A

80 V, 80 A, 4.5 mW

ELECTRICAL CONNECTION

FDMS86368-F085

Features

• Typical R

• Typical Q

= 3.7 mW at V = 10 V, I = 80 A

GS D

DS(on)

= 57 nC at V = 10 V, I = 80 A

g(tot)

• UIS Capability

• AEC−Q101 Qualified

• These Devices are Pb−Free and are RoHS Compliant

N−Channel MOSFET

Applications

Top

Bottom

• Automotive Engine Control

• PowerTrain Management

• Solenoid and Motor Drivers

• Integrated Starter/Alternator

• Primary Switch for 12 V Systems

Pin 1

DFNW8

CASE 507AU

MOSFET MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)

Symbol

Parameter

Drain to Source Voltage

Gate to Source Voltage

Ratings

Unit

MARKING DIAGRAM

DSS

Drain Current (T = 25°C)

Continuous (V = 10 V) (Note 1)

AYWWWL

Pulsed

(see Fig. 124)

FDMS

86368

Single Pulse Avalanche Energy

(Note 2)

Power Dissipation

Derate above 25°C

214

1.43

W/°C

= Assembly Location

= Year

= Work Week

= Assembly Lot

= Device Code

T , T

Operating and Storage

Temperature

−55 to +175

°C

STG

FDMS

86368

Thermal Resistance

(Junction to case)

0.7

°C/W

Maximum Thermal Resistance

(Junction to Ambient) (Note 3)

(Note: Microdot may be in either location)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Current is limited by bondwire configuration.

ORDERING INFORMATION

2. Starting T = 25°C, L = 40 μH, I = 64 A, V = 80 V during inductor charging

†

Device

Package

Shipping

and V = 0 V during time in avalanche.

3. R

is the sum of the junction−to−case and case−to−ambient thermal

FDMS86368−F085

DFNW8

(Power56)

(Pb−Free)

3000 /

Tape & Reel

resistance where the case thermal reference is defined as the solder

mounting surface of the drain pins. R

is guaranteed by design while R

is determined by the board design. The maximum rating presented here is

based on mounting on a 1 in pad of 2oz copper.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

October, 2021 − Rev. 4

FDMS86368−F085/D

12 3 4 5 6 7

中文翻译

下载PDF

与FDMS86368-F085相关器件

型号	品牌	获取价格	描述	数据表
FDMS86369-F085	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，80V，65A，7.5mΩ
FDMS86380-F085	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，80V，50A，13.4mΩ
FDMS86381-F085	ONSEMI	获取价格	N-Channel PowerTrench® MOSFET 80V, 30A, 22mΩ
FDMS86500	FAIRCHILD	获取价格	Power Field-Effect Transistor, 28.5A I(D), 60V, 0.0019ohm, 1-Element, N-Channel, Silicon,
FDMS86500DC	FAIRCHILD	获取价格	N-Channel Dual CoolTM Power TrenchÂ® MOSFET 6
FDMS86500DC	ONSEMI	获取价格	N 沟道，双 CoolTM 56 Power Trench® MOSFET，60V，108
FDMS86500L	FAIRCHILD	获取价格	N-Channel PowerTrenchÂ® MOSFET 60 V, 80 A, 2.
FDMS86500L	ONSEMI	获取价格	N 沟道，Power Trench® MOSFET，60V，158A，2.5mΩ
FDMS86500L_F142	FAIRCHILD	获取价格	Power Field-Effect Transistor, 25A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Me
FDMS86520	FAIRCHILD	获取价格	N-Channel PowerTrenchÂ® MOSFET 60 V, 42 A, 7.

与FDMS86368-F085相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

11
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

14
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

81
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

72

产品中心

服务支持

精选活动

关于我们

帮助中心

FDMS86368-F085

FDMS86368-F085 数据手册

与FDMS86368-F085相关器件

与FDMS86368-F085相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FDMS86368-F085

FDMS86368-F085 数据手册

与FDMS86368-F085相关器件

与FDMS86368-F085相关文章

您还可以找

您在本页遇到什么问题？