Datasheet > FDMS86255ET150

FDMS86255ET150

更新时间： 2024-11-14 11:15:47

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲光电二极管晶体管
页数	文件大小	规格书
8页	503K
描述
N 沟道屏蔽门极 PowerTrench® MOSFET 150 V，63 A，12.4mΩ

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FDMS86255ET150 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-N5	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
风险等级：	1.52	雪崩能效等级（Eas）：	541 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	150 V	最大漏极电流 (ID)：	10 A
最大漏源导通电阻：	0.0124 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	MO-240AA	JESD-30 代码：	R-PDSO-N5
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	5
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
最低工作温度：	-55 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	276 A	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	NO LEAD
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

FDMS86255ET150 数据手册

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与FDMS86255ET150相关器件

型号	品牌	获取价格	描述	数据表
FDMS86263P	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4.4A I(D), 150V, 0.053ohm, 1-Element, P-Channel, Silicon, M
FDMS86263P	ONSEMI	获取价格	P 沟道，PowerTrench® MOSFET，-150V，-22A，53mΩ
FDMS86300	FAIRCHILD	获取价格	N-Channel PowerTrenchÂ® MOSFET 80 V, 42 A, 3.
FDMS86300	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，80V，122A，3.9mΩ
FDMS86300DC	FAIRCHILD	获取价格	N-Channel Dual CoolTM Power TrenchÂ® MOSFET 8
FDMS86300DC	ONSEMI	获取价格	N 沟道，双 CoolTM 56 PowerTrench® MOSFET，80V，110
FDMS86310	FAIRCHILD	获取价格	N-Channel PowerTrenchÂ® MOSFET 80 V, 50 A, 4.
FDMS86310	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，80V，50A，4.8mΩ
FDMS86320	FAIRCHILD	获取价格	N-Channel PowerTrenchÂ® MOSFET
FDMS86320	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，80V，44A，11.7mΩ

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