Datasheet > FDMS86369-F085

FDMS86369-F085

更新时间： 2024-09-26 11:12:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	581K
描述
N 沟道，PowerTrench® MOSFET，80V，65A，7.5mΩ

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数据手册

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FDMS86369-F085 数据手册

DATA SHEET

www.onsemi.com

MOSFET – N-Channel,

POWERTRENCH⁾

MAX

I MAX

DSS

DS(ON)

80 V

7.5 mW @ 10 V

65 A

80 V, 65 A, 7.5 mW

ELECTRICAL CONNECTION

FDMS86369-F085

Features

• Typ R

• Typ Q

= 5.9 mW at V = 10 V; I = 65 A

GS D

DS(on)

= 35 nC at V = 10 V; I = 65 A

g(tot)

• UIS Capability

• AEC−Q101 Qualified and PPAP Capable

• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS

Compliant

N−Channel MOSFET

Bottom

Top

Applications

• Automotive Engine Control

• PowerTrain Management

• Solenoid and Motor Drivers

• Integrated Starter/Alternator

• Primary Switch for 12 V Systems

Pin 1

DFNW8

CASE 507AU

MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING DIAGRAM

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

AYWWWL

FDMS

86369

Continuous Drain Current

= 25°C

(V = 10 V) (Note 1)

Pulsed Drain Current

See

Figure 4

Single Pulse Avalanche Energy (Note 2)

Power Dissipation

= Assembly Location

= Year

= Work Week

= Assembly Lot

107

0.71

Derate above 25°C

W/°C

°C

FDMS86369 = Specific Device Code

Operating and Storage Temperature

T , T

−55 to

+175

STG

Thermal Resistance (Junction−to−Case)

1.4

°C/W

ORDERING INFORMATION

Maximum Thermal Resistance

(Junction−to−Ambient) (Note 3)

†

Device

Package

Shipping

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Current is limited by bondwire configuration.

DFNW8

(Power 56)

(Pb−Free)

FDMS86369−F085

3000 /

Tape & Reel

2. Starting Tj = 25°C, L = 20 mH, I = 52 A, V = 80 V during inductor charging

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

and V = 0 V during time in avalanche.

3. R

is the sum of the junction−to−case and case−to−ambient thermal

resistance where the case thermal reference is defined as the solder

mounting surface of the drain pins. R

is guaranteed by design while R

is determined by the user’s board design. The maximum rating presented

here is based on mounting on a 1 in pad of 2 oz copper.

Publication Order Number:

October, 2021 − Rev. 4

FDMS86369−F085/D

12 3 4 5 6 7

中文翻译

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与FDMS86369-F085相关器件

型号	品牌	获取价格	描述	数据表
FDMS86380-F085	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，80V，50A，13.4mΩ
FDMS86381-F085	ONSEMI	获取价格	N-Channel PowerTrench® MOSFET 80V, 30A, 22mΩ
FDMS86500	FAIRCHILD	获取价格	Power Field-Effect Transistor, 28.5A I(D), 60V, 0.0019ohm, 1-Element, N-Channel, Silicon,
FDMS86500DC	FAIRCHILD	获取价格	N-Channel Dual CoolTM Power TrenchÂ® MOSFET 6
FDMS86500DC	ONSEMI	获取价格	N 沟道，双 CoolTM 56 Power Trench® MOSFET，60V，108
FDMS86500L	FAIRCHILD	获取价格	N-Channel PowerTrenchÂ® MOSFET 60 V, 80 A, 2.
FDMS86500L	ONSEMI	获取价格	N 沟道，Power Trench® MOSFET，60V，158A，2.5mΩ
FDMS86500L_F142	FAIRCHILD	获取价格	Power Field-Effect Transistor, 25A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Me
FDMS86520	FAIRCHILD	获取价格	N-Channel PowerTrenchÂ® MOSFET 60 V, 42 A, 7.
FDMS86520	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，60V，42A，7.4mΩ

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