5秒后页面跳转
FDMS86520 PDF预览

FDMS86520

更新时间: 2024-09-25 11:59:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关脉冲光电二极管
页数 文件大小 规格书
7页 258K
描述
N-Channel PowerTrench® MOSFET 60 V, 42 A, 7.4 mΩ

FDMS86520 数据手册

 浏览型号FDMS86520的Datasheet PDF文件第2页浏览型号FDMS86520的Datasheet PDF文件第3页浏览型号FDMS86520的Datasheet PDF文件第4页浏览型号FDMS86520的Datasheet PDF文件第5页浏览型号FDMS86520的Datasheet PDF文件第6页浏览型号FDMS86520的Datasheet PDF文件第7页 
October 2012  
FDMS86520  
N-Channel PowerTrench® MOSFET  
60 V, 42 A, 7.4 mΩ  
Features  
General Description  
„ Max rDS(on) = 7.4 mΩ at VGS = 10 V, ID = 14 A  
This N-Channel MOSFET has been designed specifically to  
improve the overall efficiency and to minimize switch node  
ringing of DC/DC converters using either synchronous or  
conventional switching PWM controllers.It has been optimized  
for low gate charge, low rDS(on), fast switching speed and body  
diode reverse recovery performance.  
„ Max rDS(on) = 10.3 mΩ at VGS = 8 V, ID = 12.5 A  
„ Advanced Package and Silicon combination for low rDS(on)  
and high efficiency  
„ Next generation enhanced body diode technology,  
engineered for soft recovery  
Applications  
„ MSL1 robust package design  
„ 100% UIL tested  
„ Primary DC-DC Switch  
„ Motor Bridge Switch  
„ Synchronous Rectifier  
„ RoHS Compliant  
Bottom  
Top  
Pin 1  
S
D
D
D
D
S
S
S
G
S
S
G
D
D
D
D
Power 56  
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
60  
V
V
±20  
Drain Current -Continuous (Package limited)  
-Continuous (Silicon limited)  
-Continuous  
TC = 25 °C  
C = 25 °C  
42  
T
74  
ID  
A
TA = 25 °C  
(Note 1a)  
(Note 3)  
14  
-Pulsed  
80  
EAS  
Single Pulse Avalanche Energy  
Power Dissipation  
86  
69  
mJ  
W
TC = 25 °C  
TA = 25 °C  
PD  
Power Dissipation  
(Note 1a)  
2.5  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
1.8  
50  
°C/W  
(Note 1a)  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
13 ’’  
Tape Width  
12 mm  
Quantity  
FDMS86520  
FDMS86520  
Power 56  
3000 units  
1
©2012 Fairchild Semiconductor Corporation  
FDMS86520 Rev. C1  
www.fairchildsemi.com  

FDMS86520 替代型号

型号 品牌 替代类型 描述 数据表
FDMS86520L FAIRCHILD

类似代替

N-Channel PowerTrench® MOSFET 60 V, 22 A, 8.

与FDMS86520相关器件

型号 品牌 获取价格 描述 数据表
FDMS86520L FAIRCHILD

获取价格

N-Channel PowerTrench® MOSFET 60 V, 22 A, 8.
FDMS86520L ONSEMI

获取价格

N 沟道,PowerTrench® MOSFET,60V,22A,8.2mΩ
FDMS86540 FAIRCHILD

获取价格

N-Channel PowerTrench® MOSFET 60 V, 50 A, 3.
FDMS86540 ONSEMI

获取价格

N 沟道,Power Trench® MOSFET,60V,129A,3.4mΩ
FDMS86550 ONSEMI

获取价格

60V N沟道PowerTrench® MOSFET
FDMS86550ET60 ONSEMI

获取价格

N 沟道,PowerTrench® MOSFET,60V,245A,1.65mΩ
FDMS86568-F085 ONSEMI

获取价格

N 沟道,PowerTrench®,60V,80A,3.5mΩ
FDMS86569-F085 ONSEMI

获取价格

N 沟道,PowerTrench® MOSFET,60V,65A,5.6mΩ
FDMS86580-F085 ONSEMI

获取价格

N 沟道,PowerTrench® MOSFET,60V,50A,9.6mΩ
FDMS86581 ONSEMI

获取价格

Power MOSFET, 60V N Channel 30A, 15mΩ in Powe