Datasheet > FDMS86322

FDMS86322

更新时间： 2024-09-25 12:26:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	221K
描述
N-Channel PowerTrenchÂ® MOSFET 80 V, 60 A, 7.65 m

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FDMS86322 数据手册

October 2010

FDMS86322

N-Channel PowerTrench^®MOSFETꢀ

80 V, 60 A, 7.65 mꢁ

Features

Max r_DS(on)= 7.65 mꢁ at V_GS= 10 V, I_D= 13 A

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench^®process thant has

been especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

Max r_DS(on)= 12 mꢁ at V_GS= 6 V, I_D= 7.2 A

Advanced Package and Silicon combination for low r_DS(on)

and high efficiency

MSL1 robust package design

100% UIL tested

Application

DC-DC Conversion

RoHS Compliant

Bottom

Top

Pin 1

Power 56

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25 °C

_C= 25 °C

T_A= 25 °C

200

135

104

2.5

I_D

(Note 1a)

(Note 3)

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation

T_C= 25 °C

T_A= 25 °C

P_D

(Note 1a)

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_ꢂJC

R_ꢂJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

1.2

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

FDMS86322

Device

FDMS86322

Package

Power 56

Reel Size

13 ’’

Tape Width

12 mm

Quantity

3000 units

FDMS86322 RevꢀC

www.fairchildsemi.com

12 3 4 5 6 7

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