FDMC8030

更新时间： 2024-11-18 12:23:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	341K
描述
Dual N-Channel Power TrenchÂ® MOSFET 40 V, 12 A, 10 mÎ©

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数据手册

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FDMC8030 数据手册

August 2011

FDMC8030

Dual N-Channel Power Trench^®MOSFET

40 V, 12 A, 10 mΩ

Features

General Description

Max r_DS(on)= 10 mΩ at V_GS= 10 V, I_D= 12 A

Max r_DS(on)= 14 mΩ at V_GS= 4.5 V, I_D= 10 A

Max r_DS(on)= 28 mΩ at V_GS= 3.2 V, I_D= 4 A

Termination is Lead-free and RoHS Compliant

This device includes two 40V N-Channel MOSFETs in a dual

Power 33 (3 mm X 3 mm MLP) package. The package is

enhanced for exceptional thermal performance.

Applications

Battery Protection

Load Switching

Point of Load

Pin 1

G1 S1 S1 S1

Bottom Drain2 Contact

S2 S2

G2 S2

Power 33

Bottom Drain1 Contact

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Pulsed

±12

(Note 4)

T_A= 25 °C

(Note 1a)

I_D

E_AS

P_D

Single Pulse Avalanche Energy

Power Dissipation

(Note 3)

(Note 1a)

(Note 1b)

T_A= 25 °C

1.9

0.8

Power Dissipation

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJA

Thermal Resistance, Junction to Ambient

(Note 1a)

(Note 1b)

°C/W

155

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

12 mm

Quantity

FDMC8030

Power 33

13 ’’

3000 units

FDMC8030 Rev.C

www.fairchildsemi.com

12 3 4 5 6 7

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