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FDMC8200S PDF预览

FDMC8200S

更新时间: 2024-11-19 11:12:15
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
12页 330K
描述
双 N 沟道,PowerTrench® MOSFET,30V,10mΩ,20mΩ

FDMC8200S 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, S-PDSO-N8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:23 weeks风险等级:0.98
外壳连接:DRAIN SOURCE配置:SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):46 A
最大漏极电流 (ID):6 A最大漏源导通电阻:0.02 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):30 pF
JESD-30 代码:S-PDSO-N8JESD-609代码:e4
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.5 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDMC8200S 数据手册

 浏览型号FDMC8200S的Datasheet PDF文件第2页浏览型号FDMC8200S的Datasheet PDF文件第3页浏览型号FDMC8200S的Datasheet PDF文件第4页浏览型号FDMC8200S的Datasheet PDF文件第5页浏览型号FDMC8200S的Datasheet PDF文件第6页浏览型号FDMC8200S的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
D1  
MOSFET – Dual, N-Channel,  
POWERTRENCH)  
D1  
D1  
G1  
Pin 1  
D1  
D2/S1  
30 V, 10 mW, 20 mW  
S2  
S2  
S2  
FDMC8200S  
G2  
Top  
General Description  
V
IN  
This device includes two specialized N−Channel MOSFETs in a  
dual Power33 (3 mm x 3 mm MLP) package. The switch node has  
been internally connected to enable easy placement and routing of  
synchronous buck converters. The control MOSFET (Q1) and  
synchronous MOSFET (Q2) have been designed to provide optimal  
power efficiency.  
V
IN  
V
IN  
G
HS  
V
IN  
SWITCH  
NODE  
GND  
GND  
GND  
Features  
G
LS  
Q1: N−Channel  
Bottom  
Max r  
Max r  
) = 20 mW at V = 10 V, I = 6 A  
GS D  
DS(on  
WDFN8 3x3, 0.65P  
(Power 33)  
= 32 mW at V = 4.5 V, I = 5 A  
DS(on)  
GS  
D
CASE 511DE  
Q2: N−Channel  
Max r  
Max r  
= 10 mW at V = 10 V, I = 8.5 A  
GS D  
DS(on)  
= 13.5 mW at V = 4.5 V, I = 7.2 A  
DS(on)  
GS  
D
This Device is Pb−Free, Halide Free and is RoHS Compliant  
MARKING DIAGRAM  
Applications  
$Y&Z&2&K  
FDMC  
8200S  
Mobile Computing  
Mobile Internet Devices  
General Purpose Point of Load  
$Y  
= Logo  
&Z  
&2  
&K  
= Assembly Plant Code  
= 2−Digit Date Code  
= 2−Digits Lot Run Traceability Code  
FDMC8200S = Device Code  
SCHEMATIC  
Q2  
5
6
7
8
4
3
2
1
Q1  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 10 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
February, 2023 − Rev. 4  
FDMC8200S/D  

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