是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, S-PDSO-N8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 23 weeks | 风险等级: | 0.98 |
外壳连接: | DRAIN SOURCE | 配置: | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 46 A |
最大漏极电流 (ID): | 6 A | 最大漏源导通电阻: | 0.02 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 30 pF |
JESD-30 代码: | S-PDSO-N8 | JESD-609代码: | e4 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | SQUARE | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2.5 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 端子形式: | NO LEAD |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDMC8296 | FAIRCHILD |
获取价格 |
N-Channel Power Trench㈢ MOSFET 30V, 18A, 8.0m | |
FDMC8296 | ONSEMI |
获取价格 |
N 沟道,Power Trench® MOSFET,30V,18A,8.0mΩ | |
FDMC8296_10 | FAIRCHILD |
获取价格 |
N-Channel Power Trench® MOSFET 30V, 18A, 8.0 | |
FDMC8321L | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Me | |
FDMC8321L | ONSEMI |
获取价格 |
N 沟道 Power Trench® MOSFET 40V,49A,2.5mΩ | |
FDMC8321LDC | ONSEMI |
获取价格 |
N 沟道,Power Trench® MOSFET,40V,108A,2.5mΩ | |
FDMC8327L | FAIRCHILD |
获取价格 |
N-Channel PowerTrench® MOSFET 40 V, 14 A, 9. | |
FDMC8327L | ONSEMI |
获取价格 |
N 沟道,Power Trench® MOSFET,40V,14A,9.7mΩ | |
FDMC8360L | FAIRCHILD |
获取价格 |
N-Channel Shielded Gate Power Trench MOSFET 40 V, 80 A, 2.1 m | |
FDMC8360L | ONSEMI |
获取价格 |
N 沟道屏蔽门极 Power Trench® MOSFET 40V,80A,2.1mΩ |