Datasheet > FDMC8296_10

FDMC8296_10

更新时间： 2024-11-18 12:23:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	372K
描述
N-Channel Power TrenchÂ® MOSFET 30V, 18A, 8.0m

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FDMC8296_10 数据手册

September 2010

FDMC8296

N-Channel Power Trench^®MOSFET^ꢀ

30V, 18A, 8.0mꢁ

Features

General Description

Max r_DS(on)= 8.0mꢁ at V_GS= 10V, I_D= 12A

Max r_DS(on)= 13.0mꢁ at V_GS= 4.5V, I_D= 10A

High performance trench technology for extremely low r_DS(on)

Termination is Lead-free and RoHS Compliant

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench^®process that has

been especially tailored to minimize the on-state resistance. This

device is well suited for Power Management and load switching

applications common in Notebook Computers and Portable

Battery Packs.

Application

DC - DC Buck Converter

Notebook battery power management

Load switch in Notebook

Bottom

Top

Pin 1

MLP 3.3x3.3

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25°C

T_A= 25°C

2.3

I_D

(Note 1a)

(Note 3)

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation

T_C= 25°C

P_D

T_A= 25°C

(Note 1a)

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_ꢂJC

R_ꢂJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

4.6

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

FDMC8296

Device

FDMC8296

Package

MLP 3.3X3.3

Reel Size

13 ’’

Tape Width

12 mm

Quantity

3000 units

FDMC8296 Rev.C1

www.fairchildsemi.com

12 3 4 5 6 7

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